Ferroelectric tunnel junctions for information storage and processing.
about
Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current.Suppression of creep-regime dynamics in epitaxial ferroelectric BiFeO3 films.Functional ferroelectric tunnel junctions on silicon.Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions.Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.Space-charge Effect on Electroresistance in Metal-Ferroelectric-Metal capacitors.Unravelling and controlling hidden imprint fields in ferroelectric capacitors.Tunnel electroresistance through organic ferroelectrics.Encoding, training and retrieval in ferroelectric tunnel junctions.Room-temperature ferroelectricity in CuInP2S6 ultrathin flakesStructural and electronic transformation pathways in morphotropic BiFeO3.Learning through ferroelectric domain dynamics in solid-state synapses.Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions.Optical Imaging of Nonuniform Ferroelectricity and Strain at the Diffraction Limit.Three-dimensional imaging of vortex structure in a ferroelectric nanoparticle driven by an electric fieldGiant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier.Topological phase transformations and intrinsic size effects in ferroelectric nanoparticles.Probing electrochemically induced resistive switching of TiO2 using SPM techniques.Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films.Interfacial memristors in Al-LaNiO3 heterostructures.Insight into spin transport in oxide heterostructures from interface-resolved magnetic mapping.Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials.Unconventional resistive switching behavior in ferroelectric tunnel junctions.Tunable Negative Thermal Expansion in Layered Perovskites from Quasi-Two-Dimensional Vibrations.Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier.Ferroelectric Field Effect Induced Asymmetric Resistive Switching Effect in BaTiO3/Nb:SrTiO3 Epitaxial Heterojunctions.The influence of the local oxygen vacancy concentration on the piezoresponse of strontium titanate thin films.Ferroelectric Control of Organic/Ferromagnetic Spinterface.Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces.Electric-field-controlled interface dipole modulation for Si-based memory devices.Diamagnetism to ferromagnetism in Sr-substituted epitaxial BaTiO3 thin films
P2860
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P2860
Ferroelectric tunnel junctions for information storage and processing.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年学术文章
@wuu
2014年学术文章
@zh
2014年学术文章
@zh-cn
2014年学术文章
@zh-hans
2014年学术文章
@zh-my
2014年学术文章
@zh-sg
2014年學術文章
@yue
2014年學術文章
@zh-hant
name
Ferroelectric tunnel junctions for information storage and processing.
@en
Ferroelectric tunnel junctions for information storage and processing.
@nl
type
label
Ferroelectric tunnel junctions for information storage and processing.
@en
Ferroelectric tunnel junctions for information storage and processing.
@nl
prefLabel
Ferroelectric tunnel junctions for information storage and processing.
@en
Ferroelectric tunnel junctions for information storage and processing.
@nl
P2860
P356
P1476
Ferroelectric tunnel junctions for information storage and processing.
@en
P2093
Vincent Garcia
P2860
P2888
P356
10.1038/NCOMMS5289
P407
P577
2014-07-24T00:00:00Z
P6179
1040067292