Strong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe₂.
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A Self-Limiting Electro-Ablation Technique for the Top-Down Synthesis of Large-Area Monolayer Flakes of 2D Materials.Raman fingerprint for semi-metal WTe2 evolving from bulk to monolayer.Nonlinear Saturable Absorption of Liquid-Exfoliated Molybdenum/Tungsten Ditelluride Nanosheets.Exfoliation and Raman Spectroscopic Fingerprint of Few-Layer NiPS3 Van der Waals CrystalsRaman scattering and anomalous Stokes-anti-Stokes ratio in MoTe2 atomic layers.Composition and temperature-dependent phase transition in miscible Mo1-xWxTe2 single crystals.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions.Ultra-weak interlayer coupling in two-dimensional gallium selenide.High-performance flexible photodetectors based on GaTe nanosheets.Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2.Molybdenum Dichalcogenides for Environmental Chemical Sensing.Strain engineering of phonon thermal transport properties in monolayer 2H-MoTe2.Carbon/two-dimensional MoTe2 core/shell-structured microspheres as an anode material for Na-ion batteries.Electric and Photovoltaic Behavior of a Few-Layer α-MoTe2 /MoS2 Dichalcogenide Heterojunction.Configuration-dependent anti-ambipolar van der Waals p-n heterostructures based on pentacene single crystal and MoS2.Large variations in both dark- and photoconductivity in nanosheet networks as nanomaterial is varied from MoS2 to WTe2.Anomalous Raman scattering and lattice dynamics in mono- and few-layer WTe2.Characterization of Few-Layer 1T' MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering.Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors.High-pressure Raman scattering in bulk HfS: comparison of density functional theory methods in layered MS compounds (M = Hf, Mo) under compressionPhysical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayerMoTe2Fast High-Responsivity Few-Layer MoTe2Photodetectors
P2860
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P2860
Strong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe₂.
description
2014 nî lūn-bûn
@nan
2014 թուականի Մարտին հրատարակուած գիտական յօդուած
@hyw
2014 թվականի մարտին հրատարակված գիտական հոդված
@hy
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
name
Strong enhancement of Raman sc ...... ional mode in few-layer MoTe₂.
@ast
Strong enhancement of Raman sc ...... ional mode in few-layer MoTe₂.
@en
Strong enhancement of Raman sc ...... ional mode in few-layer MoTe₂.
@nl
type
label
Strong enhancement of Raman sc ...... ional mode in few-layer MoTe₂.
@ast
Strong enhancement of Raman sc ...... ional mode in few-layer MoTe₂.
@en
Strong enhancement of Raman sc ...... ional mode in few-layer MoTe₂.
@nl
prefLabel
Strong enhancement of Raman sc ...... ional mode in few-layer MoTe₂.
@ast
Strong enhancement of Raman sc ...... ional mode in few-layer MoTe₂.
@en
Strong enhancement of Raman sc ...... ional mode in few-layer MoTe₂.
@nl
P2093
P50
P356
P1433
P1476
Strong enhancement of Raman sc ...... ional mode in few-layer MoTe₂.
@en
P2093
Mahito Yamamoto
Sheng Tsung Wang
Yen-Fu Lin
P304
P356
10.1021/NN5007607
P407
P577
2014-03-27T00:00:00Z