about
Thickness-dependent interfacial Coulomb scattering in atomically thin field-effect transistors.Virtual substrate method for nanomaterials characterizationStrong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe₂.Photosensing performance of branched CdS/ZnO heterostructures as revealed by in situ TEM and photodetector tests.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Low operating bias and matched input-output characteristics in graphene logic inverters.High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits.Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates.Supramolecular Self-Assembly in a Sub-micrometer Electrodic Cavity: Fabrication of Heat-Reversible π-Gel Memristor.A nanomesh scaffold for supramolecular nanowire optoelectronic devices.Conduction tuning of graphene based on defect-induced localization.Fast-Response Photonic Device Based on Organic-Crystal Heterojunctions Assembled into a Vertical-Yet-Open Asymmetric Architecture.Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 LayersSuppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substratesEnhanced current-rectification in bilayer graphene with an electrically tuned sloped bandgapFlexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS-ZnO Heterostructure NanofilmsFlexible SnO2 hollow nanosphere film based high-performance ultraviolet photodetectorLow-Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO-SnO2Heterojunction NanofibersUltrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectorsEnhanced logic performance with semiconducting bilayer graphene channelsComplementary-like graphene logic gates controlled by electrostatic dopingElectrostatically Reversible Polarity of Ambipolar α-MoTe2 TransistorsCoherent Coupling of WS2 Monolayers with Metallic Photonic Nanostructures at Room TemperatureInSe: a two-dimensional material with strong interlayer couplingNano-Subsidence-Assisted Precise Integration of Patterned Two-Dimensional Materials for High-Performance Photodetector ArraysOne-Step Growth of Spatially Graded Mo1- xW xS2 Monolayers with a Wide Span in Composition (from x = 0 to 1) at a Large Scale
P50
Q33356205-BA7A34CE-BC87-4096-8308-8BB3803B4431Q33762949-B62948C3-6819-497A-9CE8-01125621491BQ34411364-C7C557F2-951D-4A68-BA45-31A9B352A7FCQ35185011-6ADB91D3-2BA3-4561-8CAB-41AC32C700F5Q38643122-0E692B7E-8154-4DB2-8432-29F686087304Q39867647-6FDA0AB4-F224-4092-B7B9-C406B4AC9501Q44739071-6DB8A1AA-EAFC-4594-8B51-F07AAE2B0072Q46627889-69675463-71AC-4059-9030-AD672052C2FDQ47755278-4146853A-4020-45E6-A552-0F08941800BFQ48144299-E04D3549-E5FE-4901-94EC-8227B38F737DQ50478603-7B5879D5-AEB4-4C34-8632-B7A2EF55B679Q51033387-8345DF71-B1F4-4D5D-91D3-E71732F4BA9FQ57785821-EB5019F1-707B-43D2-9E41-5687CABF08B3Q57785853-61EBF6A3-F460-402C-940F-70340AE9722BQ57785868-B6A8DF4C-2CEB-47E8-92B7-6B4681D4C0FAQ58202357-1420C97B-EBD6-4AEA-ABDA-525F51C34175Q58202366-C75237E7-4EEC-446D-BCC2-147B041DB502Q58202375-423A6708-29F7-4EE4-AB7D-5D6BC57E64A4Q63381447-89D89D0D-266F-4CC8-BEFB-6DCE111262B3Q82889856-78A72BDD-63B8-40C2-A74F-BDF772465EE1Q84023198-6EE83F5A-23E5-4BE8-8188-F9DA737C2F7FQ87337031-59F6B57C-AFBC-4937-8079-BAFF0AFEDAE6Q87594138-67715477-EF6D-4F70-A51B-FB888F29CA6DQ88250160-B007BF3E-3EE8-4769-8C28-7BF699905B7CQ91397429-D8F01264-5D74-4022-A67E-29EF3C0E5FDDQ92235203-04F5FF03-7D5E-4D0F-82ED-7CCFE0827846
P50
description
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
Song-Lin Li
@ast
Song-Lin Li
@en
Song-Lin Li
@es
Song-Lin Li
@nl
Song-Lin Li
@sl
type
label
Song-Lin Li
@ast
Song-Lin Li
@en
Song-Lin Li
@es
Song-Lin Li
@nl
Song-Lin Li
@sl
prefLabel
Song-Lin Li
@ast
Song-Lin Li
@en
Song-Lin Li
@es
Song-Lin Li
@nl
Song-Lin Li
@sl
P1053
F-3059-2010
P106
P31
P3829
P496
0000-0002-3995-9580