Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.
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Thermal crosstalk in 3-dimensional RRAM crossbar array.Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.Controlling the ferroelectric and resistive switching properties of a BiFeO3 thin film prepared using sub-5 nm dimension nanoparticles.
P2860
Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.
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2015年の論文
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2015年論文
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2015年論文
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2015年論文
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2015年論文
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2015年論文
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2015年论文
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2015年论文
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name
Integration of lead-free ferro ...... -volatile memory applications.
@ast
Integration of lead-free ferro ...... -volatile memory applications.
@en
type
label
Integration of lead-free ferro ...... -volatile memory applications.
@ast
Integration of lead-free ferro ...... -volatile memory applications.
@en
prefLabel
Integration of lead-free ferro ...... -volatile memory applications.
@ast
Integration of lead-free ferro ...... -volatile memory applications.
@en
P2093
P2860
P356
P1433
P1476
Integration of lead-free ferro ...... n-volatile memory applications
@en
P2093
Deepam Maurya
Mantu K Hudait
Nripendra N Halder
Pallab Banerji
Shashank Priya
Souvik Kundu
P2860
P2888
P356
10.1038/SREP08494
P407
P577
2015-02-16T00:00:00Z