about
Thermally induced crystallization in NbO2 thin films.Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications.Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design.A Collective Study on Modeling and Simulation of Resistive Random Access Memory.
P2860
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
Thermal crosstalk in 3-dimensional RRAM crossbar array.
@ast
Thermal crosstalk in 3-dimensional RRAM crossbar array.
@en
type
label
Thermal crosstalk in 3-dimensional RRAM crossbar array.
@ast
Thermal crosstalk in 3-dimensional RRAM crossbar array.
@en
prefLabel
Thermal crosstalk in 3-dimensional RRAM crossbar array.
@ast
Thermal crosstalk in 3-dimensional RRAM crossbar array.
@en
P2093
P2860
P356
P1433
P1476
Thermal crosstalk in 3-dimensional RRAM crossbar array.
@en
P2093
Hangbing Lv
Nianduan Lu
Pengxiao Sun
Shibing Long
Yingtao Li
P2860
P2888
P356
10.1038/SREP13504
P407
P50
P577
2015-08-27T00:00:00Z
P5875
P6179
1028890900