Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors.
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The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures.Graphene contacts to a HfSe2/SnS2 heterostructure.High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer.Locally Gated SnS2/hBN Thin Film Transistors with a Broadband Photoresponse.Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides
P2860
Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
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name
Electrically Tunable and Negat ...... Heterostructured Transistors.
@ast
Electrically Tunable and Negat ...... Heterostructured Transistors.
@en
type
label
Electrically Tunable and Negat ...... Heterostructured Transistors.
@ast
Electrically Tunable and Negat ...... Heterostructured Transistors.
@en
prefLabel
Electrically Tunable and Negat ...... Heterostructured Transistors.
@ast
Electrically Tunable and Negat ...... Heterostructured Transistors.
@en
P2860
P356
P1433
P1476
Electrically Tunable and Negat ...... 2 Heterostructured Transistors
@en
P2093
Eun Kyu Kim
P2860
P2888
P356
10.1038/SREP13743
P407
P50
P577
2015-09-03T00:00:00Z