MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts. - Wikidata - awgldk - TriplyDB

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

http://www.wikidata.org/entity/Q39244927

about

Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes.Layered memristive and memcapacitive switches for printable electronics.Controllable Schottky barriers between MoS2 and permalloy.Influence of post-annealing on the off current of MoS2 field-effect transistors A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy.Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors.Polarity control in WSe2 double-gate transistors.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Electrical contacts to two-dimensional semiconductors.Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices.Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering.Multibit MoS2 Photoelectronic Memory with Ultrahigh Sensitivity.Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors.A Facile Way to Fabricate High-Performance Solution-Processed n-MoS2/p-MoS2 Bilayer Photodetectors Vacancy and Doping States in Monolayer and bulk Black Phosphorus.Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor Controlled doping of large-area trilayer MoS2 with molecular reductants and oxidants.Wafer-Scale Synthesis of Reliable High-Mobility Molybdenum Disulfide Thin Films via Inhibitor-Utilizing Atomic Layer Deposition.Non-invasively improving the Schottky barriers of metal-MoS2 interfaces: effects of atomic vacancies in a BN buffer layer.Controlling the electronic and geometric structures of 2D insertions to realize high performance metal/insertion-MoS2 sandwich interfaces.Various and Tunable Transport Properties of WSe2 Transistor Formed by Metal Contacts.Designing high performance metal-mMoS2 interfaces by two-dimensional insertions with suitable thickness.MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.Engineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects.Thermally Driven Pure Spin and Valley Currents via the Anomalous Nernst Effect in Monolayer Group-VI Dichalcogenides.Self-powered broadband, high-detectivity and ultrafast photodetectors based on Pd-MoS2/Si heterojunctions.Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2.Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine.Single-layer MoS2 formation by sulfidation of molybdenum oxides in different oxidation states on Au(111).Interface engineering for high-performance top-gated MoS2 field-effect transistors.Molybdenum oxide MoOx: A versatile hole contact for silicon solar cells Controlled Layer Thinning and p-Type Doping of WSe2 by Vapor XeF2 Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides

P2860

Q28829109-D957AAC5-8F53-4DD5-9561-38117292E9A3 Q34306136-923E74D4-ABE1-4004-961A-F76B5219E9FF Q34447087-2BFF2873-1193-4E2C-A38F-8A1836DD9105 Q34452934-F2C10CEB-0FBA-478B-BC73-64120D2480E9 Q35264548-8D659929-AB17-49C3-9919-4E1641E2A048 Q35767235-D2585371-2A8E-4310-93B5-14098E786FE4 Q36022834-9F2AA61B-4A94-4C23-98D5-129982143A00 Q37076691-72698B0A-E386-4BD7-826E-0278B0A815AD Q38531628-41D7BE55-B61C-44EA-841E-43D42B2AC7DC Q38638927-96937B1F-6AC9-40E8-B32A-76403454A3B2 Q38655371-5FD3594D-D212-4111-978C-FE5BC5CB341C Q38673289-B6D477D0-F802-4632-A856-3BE3166FF9D5 Q38822030-88023433-F552-4CD6-A958-466025C75EA4 Q39110944-C0ECF523-8DA4-4CFC-91AA-D6634728AA21 Q39452693-4382CB84-38D7-4FAF-887D-DD88C301E4E7 Q41874143-B5D9525F-A74D-46BA-94AF-3CCD84F4FE05 Q41942018-2BFF434E-5420-4BDC-8063-B1156D7F5411 Q42149652-F234C7D4-0F9B-43EF-84DA-E2A31A860FA1 Q42379653-8AB672E5-22CE-436C-969B-D652DD353824 Q46787690-41987AA3-276D-4ED0-A2B8-FD30CFC7B7C1 Q47389089-C91B973B-04BD-42D8-A0E5-4337F1A576BC Q47898358-AC3A06D4-9691-45E8-A40E-8E899F7C57C9 Q50867743-4D03D9F1-5304-46D5-9B1A-FA13EC7C1A03 Q50958462-925DAD1A-AAEF-4FEA-9155-EBC6FFFDFAE2 Q51110266-322A85A3-B279-4F12-9308-898B9FA11BE3 Q51131988-664659B3-0428-4195-96F9-540EB9DFB4C3 Q51329869-04935748-1813-4DC4-AB99-833DACC66C91 Q51591436-B79C515E-476C-4ABF-8333-8466766FF7FC Q51608822-A80FCA23-26D7-4BD0-BC4F-296A7A5FD685 Q52670747-295ED892-B98C-451F-9A5B-E291B93DBDE3 Q52989793-9AABAF5C-139D-41DB-8388-8DFCF0B29E66 Q53285759-E6CDEC2C-8587-45E7-8015-AD6A46A77863 Q53488670-2EA8F95D-06DF-43AC-96BD-12CB4336FC70 Q57623956-16AC5B52-7939-447B-9FA2-A2EE01C8B531 Q57876817-13B969B7-157B-483D-952A-F530B3AA4E6D Q58337267-C2859DEB-0F8E-489C-9AA7-B2EA6181A7EA Q59134272-6FE6EDF0-B84D-47DA-BD42-6082F78AF69F

P2860

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

http://www.wikidata.org/entity/Q39244927

description

2014 nî lūn-bûn

@nan

2014年の論文

@ja

2014年学术文章

@wuu

2014年学术文章

@zh-cn

2014年学术文章

@zh-hans

2014年学术文章

@zh-my

2014年学术文章

@zh-sg

2014年學術文章

@yue

2014年學術文章

@zh

2014年學術文章

@zh-hant

name

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

@en

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

@nl

type

label

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

@en

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

@nl

prefLabel

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

@en

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

@nl

P1433

Q39244927-439316BF-86F6-42EF-B745-534393B3AAA6

P1476

Q39244927-3FC38E41-6785-43CF-9655-B566BF9BA33E

P2093

Q39244927-08B2F296-B319-4CCF-9120-CB1C61E38050

Q39244927-382AC2FD-1671-4E74-B68B-F8F6310A8909

Q39244927-4AADDD90-1A55-469F-A903-3E8A38FF1ABA

Q39244927-53F8F0E6-DEA6-4619-87B0-454E9EE95FA4

Q39244927-7CEC7851-DA70-40B3-A9D0-C92736CDD23F

Q39244927-7D3BB8D0-EC0D-493F-8D08-76EF1CA276E4

Q39244927-A9182ADA-15F3-48BE-A326-6A3EBCD57F30

Q39244927-B8EE235B-0310-4EED-BEBA-852EEFBED657

Q39244927-EE31B9DF-E932-429C-B301-EBEA89A05B3A

P304

Q39244927-0735EE93-2FB2-4870-B9EB-A596C7EE1135

P31

Q39244927-73847618-91AA-447D-9783-91B2260B8979

P356

Q39244927-848DAED9-6FA8-4540-853A-99CC616025B3

P407

Q39244927-B58489CC-8B4F-408F-9E31-40F5BF8B2830

P433

Q39244927-38E5AC10-9C4D-4B74-A3C0-4DD517146A37

P478

Q39244927-117ED40E-9919-4D71-8636-98A2AD01911F

P50

Q39244927-0FDDEF76-77CF-4161-BA89-C4E8E194AD69

Q39244927-769278DD-1C5D-4813-A67E-3DD0D3AB6B0D

P577

Q39244927-B2D08F00-F768-4F1D-BBAD-028414FE2678

P5875

Q39244927-33206E66-0B76-4B01-AE2F-BB3291FC15A6

P698

Q39244927-CB870820-D816-47E0-8550-1C73AF1A6CEF

P818

Q39244927-AD2B376C-5EF2-4E38-A702-E4ED22C3B472

P356

P1433

P1476

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts.

@en

P2093

Ali Javey

http://www.w3.org/2001/XMLSchema#string

Angelica Azcatl

http://www.w3.org/2001/XMLSchema#string

Corsin Battaglia

http://www.w3.org/2001/XMLSchema#string

Hui Fang

http://www.w3.org/2001/XMLSchema#string

Jeong Seuk Kang

http://www.w3.org/2001/XMLSchema#string

Mahmut Tosun

http://www.w3.org/2001/XMLSchema#string

Rehan Kapadia

http://www.w3.org/2001/XMLSchema#string

Stephen McDonnell

http://www.w3.org/2001/XMLSchema#string

Steven Chuang

http://www.w3.org/2001/XMLSchema#string

P304

1337-1342

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1021/NL4043505

http://www.w3.org/2001/XMLSchema#string

P407

P433

3

http://www.w3.org/2001/XMLSchema#string

P478

14

http://www.w3.org/2001/XMLSchema#string

P50

Robert M Wallace

P577

2014-02-27T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P5875

260380585

http://www.w3.org/2001/XMLSchema#string

P698

24568656

http://www.w3.org/2001/XMLSchema#string

P818

1402.6632

http://www.w3.org/2001/XMLSchema#string