Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors.
about
Interface-induced terahertz persistent photoconductance in rGO-gelatin flexible films.Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS2 junctions.Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts.Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures.
P2860
Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors.
description
2015 nî lūn-bûn
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2015年の論文
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2015年学术文章
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name
Extrinsic Origin of Persistent ...... MoS2 Field Effect Transistors.
@ast
Extrinsic Origin of Persistent ...... MoS2 Field Effect Transistors.
@en
type
label
Extrinsic Origin of Persistent ...... MoS2 Field Effect Transistors.
@ast
Extrinsic Origin of Persistent ...... MoS2 Field Effect Transistors.
@en
prefLabel
Extrinsic Origin of Persistent ...... MoS2 Field Effect Transistors.
@ast
Extrinsic Origin of Persistent ...... MoS2 Field Effect Transistors.
@en
P2093
P2860
P356
P1433
P1476
Extrinsic Origin of Persistent ...... MoS2 Field Effect Transistors.
@en
P2093
Cheng-Hua Liu
Chun-Wei Chen
Fu-Yu Shih
Po-Hsun Ho
Shao-Yu Chen
Yueh-Chun Wu
P2860
P2888
P356
10.1038/SREP11472
P407
P577
2015-06-26T00:00:00Z
P5875
P6179
1011906460
P698
P818
1505.05234