Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier.
about
Coplanar semiconductor-metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy.Black phosphorus transistors with van der Waals-type electrical contacts.Construction and preparation of novel 2D metal-free few-layer BN modified graphene-like g-C3N4 with enhanced photocatalytic performance.Two-Dimensional Haeckelite NbS2 : A Diamagnetic High-Mobility Semiconductor with Nb4+ Ions.Tunable Schottky contacts in MSe2/NbSe2 (M = Mo and W) heterostructures and promising application potential in field-effect transistors.Nanodots of transition metal dichalcogenides embedded in MoS2 and MoSe2: first-principles calculations.Photocarrier generation from interlayer charge-transfer transitions in WS2-graphene heterostructures.TiS3 sheet based van der Waals heterostructures with a tunable Schottky barrier.Zweidimensionales Haeckelit-NbS2 - ein diamagnetischer Halbleiter mit Nb4+ -Ionen und hoher LadungsträgermobilitätPhotoresponsivity of an all-semimetal heterostructure based on graphene and WTeCharge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides
P2860
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P2860
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
Van der Waals metal-semiconduc ...... ve tuning of Schottky barrier.
@en
type
label
Van der Waals metal-semiconduc ...... ve tuning of Schottky barrier.
@en
prefLabel
Van der Waals metal-semiconduc ...... ve tuning of Schottky barrier.
@en
P2860
P356
P1433
P1476
Van der Waals metal-semiconduc ...... ve tuning of Schottky barrier.
@en
P2093
Paul Stradins
P2860
P304
P356
10.1126/SCIADV.1600069
P577
2016-04-22T00:00:00Z
P698
P818
1601.03845