about
Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfideThermal Conductance of the 2D MoS2/h-BN and graphene/h-BN Interfaces.A microprocessor based on a two-dimensional semiconductorExciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy.Selective control of electron and hole tunneling in 2D assembly.Indium selenide: an insight into electronic band structure and surface excitations.High-throughput Identification and Characterization of Two-dimensional Materials using Density functional theory.Transparent, flexible, and stretchable WS2 based humidity sensors for electronic skin.Nucleation control for large, single crystalline domains of monolayer hexagonal boron nitride via Si-doped Fe catalysts.Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors.High accuracy determination of the thermal properties of supported 2D materialsRevealing Optical Properties of Reduced-Dimensionality Materials at Relevant Length Scales.Designing the shape evolution of SnSe2 nanosheets and their optoelectronic properties.Tailoring nonlinear optical properties of Bi2Se3 through ion irradiation.Interferometric Motion Detection in Atomic Layer 2D Nanostructures: Visualizing Signal Transduction Efficiency and Optimization PathwaysIn-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy.Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.Electrically Tunable Nd:YAG waveguide laser based on Graphene.Temperature dependence of Coulomb oscillations in a few-layer two-dimensional WS2 quantum dot.Metal Decoration Effects on the Gas-Sensing Properties of 2D Hybrid-Structures on Flexible Substrates.Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model.Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors.Effect of Doping on Hydrogen Evolution Reaction of Vanadium Disulfide Monolayer.Self-Limiting Layer Synthesis of Transition Metal DichalcogenidesControlling Catalyst Bulk Reservoir Effects for Monolayer Hexagonal Boron Nitride CVDTime Evolution of the Wettability of Supported Graphene under Ambient Air Exposure.Ferroelasticity and domain physics in two-dimensional transition metal dichalcogenide monolayersVan der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier.Band engineering in a van der Waals heterostructure using a 2D polar material and a capping layerFew-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors.Polarity control in WSe2 double-gate transistors.Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax.Tungsten Ditelluride: a layered semimetal.Thermochemistry and kinetics of graphite oxide exothermic decomposition for safety in large-scale storage and processing.Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.The Growth Mechanism of Transition Metal Dichalcogenides by using Sulfurization of Pre-deposited Transition Metals and the 2D Crystal Hetero-structure Establishment.Vegetable-based dye-sensitized solar cells.Photocurrent generation with two-dimensional van der Waals semiconductors.Two-dimensional transition metal dichalcogenide alloys: preparation, characterization and applications.Review of Graphene as a Solid State Diffusion Barrier.
P2860
Q28266212-371AA447-9688-4223-99D7-E7186D2F0514Q30361585-0935163A-D04D-403D-AD3C-65C49D52F82BQ33571900-AA471481-C39B-4E5A-9A1B-941FBAE68EDBQ33572323-85CC1126-69CF-4FAB-8263-B46AB379FF37Q33580213-2B92C191-F8F7-4F42-98AD-2308A7064129Q33794198-CD918276-BF7D-4024-87A5-DEEAE04B30DFQ33899497-0E96D4CF-5DD4-4A1D-A20B-4C27E00320F4Q34556172-04876FBC-5CB6-46ED-85D4-9CE971160E05Q35172528-B646EAD3-2AF5-4EEA-9A69-54EEE0DDE592Q35543235-6BD5DEFB-7EF3-498F-893C-6BC451ECC915Q35693116-67C6A3D7-C05F-40AB-ADDC-88D22D5AD528Q35762263-34F706C9-B9B5-4735-A4F8-364AB24F4FEFQ35794957-A4395A6C-BF9D-4F5A-BE88-5DBE52B67BABQ35926757-D0001BCC-A57D-4F53-AFE1-E6EDB76F43EFQ36087739-8CB30921-64E1-4F68-993E-3BE02F718B5BQ36129101-7A94E20B-EC39-4C70-BB54-B04F5DD9C2C0Q36149887-A0A8C6A6-8C29-4A51-9576-63BE86FC65E7Q36189365-0173FF56-F344-4F2D-BB30-21074C44C460Q36249703-0FB73BF4-39C3-4518-BEF2-6B3D6563EE8CQ36252306-BB2B3B40-F6EC-4E86-B869-7F70F17B6154Q36320753-A9CB0753-D2C4-4568-8621-2C6FACB72EDDQ36346193-B1A923A6-C6D6-4886-A776-B8A3542B6C5DQ36363215-AB44F9B9-4E05-4E3A-85A6-67792B1B9578Q36423254-8A3DF8EF-A2A9-4E29-872E-41F4F78C1B8EQ36574417-C1540460-08AD-468C-A92B-9668507CC363Q36581561-320FEA93-3FC5-40DF-B14B-576932218153Q36627564-5C903266-1F24-4BC8-8690-183D6FF14E20Q36839799-73051F23-F7D8-42BB-9E77-E788D3CC8C2CQ37005610-CA1EC38A-9E74-4FDF-9D06-090B83B3EFDAQ37040120-75D280BA-5439-4714-B5E6-05E26C7517BDQ37076691-B7769131-5BBD-41BA-949A-55ED21421D04Q37360386-4F9680ED-5FB4-4396-83F3-83631C3B735BQ37502066-C6BE679E-0D32-4B5E-BF11-0531E16B4332Q37581388-59D82261-1C5C-49AF-A287-8B6025532690Q37594421-DDA05AFA-7091-4BD2-BB95-47918E674744Q37630744-6E457A8C-0A6C-426A-99B3-31818F5C9CDAQ38412082-8393DA8A-A774-40BF-A6C5-BBFB73CAE912Q38440569-3D5C1677-0C1F-4857-8FF7-A7B8C965A924Q38617886-439C7AAF-EC04-489A-AFAB-5862977FC662Q38622329-4B687731-290A-4B1C-A1DD-A03E17430C85
P2860
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
Electronics based on two-dimensional materials.
@en
type
label
Electronics based on two-dimensional materials.
@en
prefLabel
Electronics based on two-dimensional materials.
@en
P2093
P50
P356
P1476
Electronics based on two-dimensional materials.
@en
P2093
Luigi Colombo
Sanjay K Banerjee
Tomás Palacios
P2888
P304
P356
10.1038/NNANO.2014.207
P407
P577
2014-10-01T00:00:00Z
P5875
P6179
1022224835