Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties.
about
Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film.The Property, Preparation and Application of Topological Insulators: A Review.Degradation of topological surface state by nonmagnetic S doping in SrxBi2Se3Tetradymites as thermoelectrics and topological insulatorsLaser-induced persistent photovoltage on the surface of a ternary topological insulator at room temperature
P2860
Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties.
@en
type
label
Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties.
@en
prefLabel
Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties.
@en
P2093
P2860
P50
P356
P1476
Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties.
@en
P2093
Ali Yazdani
Jingjing Lin
S H Lapidus
S K Kushwaha
P2860
P2888
P356
10.1038/NCOMMS11456
P407
P577
2016-04-27T00:00:00Z
P5875
P698
P818
1508.03655