Electric Field Breakdown of Charge-Density-Wave—Induced Anomalies in Nb Se 3p -type Bi 2 Se 3 for topological insulator and low-temperature thermoelectric applicationsLarge, non-saturating magnetoresistance in WTe2Quantifying the integration of quorum-sensing signals with single-cell resolution.Measurement of the copy number of the master quorum-sensing regulator of a bacterial cell.A tunable topological insulator in the spin helical Dirac transport regime.Protein-level fluctuation correlation at the microcolony level and its application to the Vibrio harveyi quorum-sensing circuitActive regulation of receptor ratios controls integration of quorum-sensing signals in Vibrio harveyi.Heat capacity peak at the quantum critical point of the transverse Ising magnet CoNb2O6Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties.Quantitative transcription factor binding kinetics at the single-molecule levelHigh-Pressure Synthesis and Characterization of β-GeSe-A Six-Membered-Ring Semiconductor in an Uncommon Boat Conformation.A pressure-induced topological phase with large Berry curvature in Pb1-x Sn x Te.The chiral anomaly and thermopower of Weyl fermions in the half-Heusler GdPtBi.Anomalous Nernst Effect in the Dirac Semimetal Cd_{3}As_{2}.Time-Reversal-Breaking Weyl Fermions in Magnetic Heusler Alloys.Speeding up a single-molecule DNA device with a simple catalyst.TaRh2B2 and NbRh2B2: Superconductors with a chiral noncentrosymmetric crystal structure.Bulk crystal growth and electronic characterization of the 3D Dirac semimetal Na3BiQuantum oscillations in an insulatorEvidence for the chiral anomaly in the Dirac semimetal Na3BiEffect of Zn impurities on the normal-state Hall angle in single-crystal YBa_{2}Cu_{3-x}Zn_{x}O_{7-δ}Hall effect ofLa2−xSrxCuO4: Implications for the electronic structure in the normal stateVortex-Array Model for Charge-Density-Wave Conduction NoiseNovel field-induced asymmetry in the remanent magnetization of the superconductor YBa2Cu3O7Spin entropy as the likely source of enhanced thermopower in Na x Co2O4Spin-Polarized Intergrain Tunneling inLa2/3Sr1/3MnO3A ferromagnetic insulating substrate for the epitaxial growth of topological insulatorsDefects and high bulk resistivities in the Bi-rich tetradymite topological insulator Bi2+xTe2−xSeDevelopment of ferromagnetism in the doped topological insulatorBi2−xMnxTe3Low temperature synthesis of MgB[sub 2]Evidence for massive bulk Dirac fermions in Pb1−xSn x Se from Nernst and thermopower experimentsCorrelation of crystal quality and extreme magnetoresistance of WTe2Dirac metal to topological metal transition at a structural phase change inAu2Pband prediction ofZ2topology for the superconductorThree-dimensional Dirac semimetals: Design principles and predictions of new materialsParamagnetic to ferromagnetic phase transition in lightly Fe-dopedCr2BCrystal structure and elementary electronic properties of Bi-stabilized α-In2Se3Large enhancement of the thermopower in Na x CoO2 at high Na dopingOscillatory surface dichroism of the insulating topological insulator Bi2Te2SeA gap-protected zero-Hall effect state in the quantum limit of the non-symmorphic metal KHgSb
P50
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P50
description
Ameerika Ühendriikide füüsik
@et
American physicist
@en
Amerikaans natuurkundige
@nl
US-amerikanischer Physiker
@de
amerikanesche Physiker
@lb
fisico statunitense
@it
fisikari estatubatuarra
@eu
fizician american
@ro
fizikan amerikan
@sq
físic estatunidenc
@ca
name
Nai Phuan Ong
@ast
Nai Phuan Ong
@ca
Nai Phuan Ong
@da
Nai Phuan Ong
@de
Nai Phuan Ong
@en
Nai Phuan Ong
@es
Nai Phuan Ong
@fr
Nai Phuan Ong
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Nai Phuan Ong
@nl
Nai Phuan Ong
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type
label
Nai Phuan Ong
@ast
Nai Phuan Ong
@ca
Nai Phuan Ong
@da
Nai Phuan Ong
@de
Nai Phuan Ong
@en
Nai Phuan Ong
@es
Nai Phuan Ong
@fr
Nai Phuan Ong
@lb
Nai Phuan Ong
@nl
Nai Phuan Ong
@sl
prefLabel
Nai Phuan Ong
@ast
Nai Phuan Ong
@ca
Nai Phuan Ong
@da
Nai Phuan Ong
@de
Nai Phuan Ong
@en
Nai Phuan Ong
@es
Nai Phuan Ong
@fr
Nai Phuan Ong
@lb
Nai Phuan Ong
@nl
Nai Phuan Ong
@sl
P214
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P106
P1412
P19
P21
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P244
n2001002245
P31
P496
0000-0001-7166-1058
P569
1948-09-10T00:00:00Z
P734
P7859
lccn-n2001002245