Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory.
about
Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications.Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design.Electrochemical Tantalum Oxide for Resistive Switching Memories.Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition
P2860
Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
Bottom-up synthesis of ordered ...... le resistive switching memory.
@en
type
label
Bottom-up synthesis of ordered ...... le resistive switching memory.
@en
prefLabel
Bottom-up synthesis of ordered ...... le resistive switching memory.
@en
P2860
P356
P1433
P1476
Bottom-up synthesis of ordered ...... le resistive switching memory.
@en
P2093
Un-Bin Han
P2860
P2888
P356
10.1038/SREP25537
P407
P50
P577
2016-05-09T00:00:00Z
P6179
1035329861