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A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials.Flexible Multistate Data Storage Devices Fabricated Using Natural Lignin at Room Temperature.Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in AirMultilevel data storage memory devices based on the controlled capacitive coupling of trapped electrons.Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growthControlled synthesis of Ni/CuOx/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching.Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory.Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications.Artificial Synapses with Short- and Long-Term Memory for Spiking Neural Networks Based on Renewable Materials.Flexible resistive switching memory with a Ni/CuO x /Ni structure using an electrochemical deposition process.Dry writing of highly conductive electrodes on papers by using silver nanoparticle-graphene hybrid pencils.Design of Electrodeposited Bilayer Structures for Reliable Resistive Switching with Self-Compliance.Flexible Hybrid Organic-Inorganic Perovskite Memory.Resistive switching memory based on bioinspired natural solid polymer electrolytes.Size effects on the stabilization and growth of tetragonal ZrO2 crystallites in a nanotubular structure.Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties.Short-Term Plasticity and Long-Term Potentiation in Artificial Biosynapses with Diffusive Dynamics.Ultra-Low Power Consumption Flexible Biomemristors.Controlling the Resistive Switching Behavior in Starch-Based Flexible Biomemristors.Design of an efficient charge-trapping layer with a built-in tunnel barrier for reliable organic-transistor memory.Reduced Graphene Oxide-Based Artificial Synapse Yarns for Wearable Textile Device ApplicationsFlexible Artificial Synaptic Devices Based on Collagen from Fish Protein with Spike-Timing-Dependent PlasticityControl of Gold Nanoparticle-Protein Aggregates in Albumen Matrix for Configurable Switching DevicesLead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storageAging Dynamics of Solution-Processed Amorphous Oxide Semiconductor Field Effect TransistorsHighly Stable Transparent Amorphous Oxide Semiconductor Thin-Film Transistors Having Double-Stacked Active LayersNovel Dielectric Anomaly in the Hole-DopedLa2Cu1−xLixO4andLa2−xSrxNiO4Insulators: Signature of an Electronic Glassy StateEpitaxial growth of BiFeO3 thin films by LPE and sol–gel methodsSynergistic Improvement of Long-Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia-Based Oxide-Semiconductor TransistorsFerroelectric Analog Synaptic TransistorsLiquid-based memory and artificial synapseImpact of Grain Sizes on Programmable Memory Characteristics in Two-Dimensional Organic-Inorganic Hybrid Perovskite MemoryReversible uptake and release of sodium ions in layered SnS2-reduced graphene oxide composites for neuromorphic devicesHeterosynaptic Plasticity Emulated by Liquid Crystal-Carbon Nanotube Composites with Modulatory Interneurons
P50
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P50
description
researcher ORCID ID = 0000-0002-1096-1783
@en
wetenschapper
@nl
name
Jang-Sik Lee
@ast
Jang-Sik Lee
@en
Jang-Sik Lee
@es
Jang-Sik Lee
@nl
type
label
Jang-Sik Lee
@ast
Jang-Sik Lee
@en
Jang-Sik Lee
@es
Jang-Sik Lee
@nl
prefLabel
Jang-Sik Lee
@ast
Jang-Sik Lee
@en
Jang-Sik Lee
@es
Jang-Sik Lee
@nl
P1053
A-6629-2008
P106
P1153
7601476249
P31
P3829
P3835
jang-sik-lee
P496
0000-0002-1096-1783