Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures
about
Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures
description
article científic
@ca
article scientifique
@fr
articolo scientifico
@it
artigo científico
@pt
bilimsel makale
@tr
scientific article published on 16 August 2016
@en
vedecký článok
@sk
vetenskaplig artikel
@sv
videnskabelig artikel
@da
vědecký článek
@cs
name
Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures
@en
Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures.
@nl
type
label
Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures
@en
Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures.
@nl
prefLabel
Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures
@en
Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures.
@nl
P2860
P50
P356
P1433
P1476
Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures
@en
P2860
P2888
P356
10.1038/SREP31122
P407
P577
2016-08-16T00:00:00Z
P6179
1000342635