Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory.
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A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials.Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames.Resistive Switching Memory Devices Based on Proteins.Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin.Physically Transient Resistive Switching Memory Based on Silk Protein.Electrical Switching in Thin Film Structures Based on Transition Metal Oxides
P2860
Structurally engineered stackable and scalable 3D titanium-oxide switching devices for high-density nanoscale memory.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
Structurally engineered stacka ...... high-density nanoscale memory.
@en
type
label
Structurally engineered stacka ...... high-density nanoscale memory.
@en
prefLabel
Structurally engineered stacka ...... high-density nanoscale memory.
@en
P2093
P2860
P356
P1433
P1476
Structurally engineered stacka ...... high-density nanoscale memory.
@en
P2093
Daeseok Lee
Euijun Cha
Hyunsang Hwang
Jaehyuk Park
Jaesung Park
Jeonghwan Song
Jiyong Woo
Kibong Moon
Sangheon Lee
P2860
P356
10.1002/ADMA.201403675
P407
P577
2014-11-06T00:00:00Z