In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory.
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Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM.Probing nanoscale oxygen ion motion in memristive systemsCoexistence of memory resistance and memory capacitance in TiO2 solid-state devices.In situ observation of filamentary conducting channels in an asymmetric Ta₂O5-x/TaO2-x bilayer structure.Nanoscale resistive switching devices: mechanisms and modeling.Switching mechanism and reverse engineering of low-power Cu-based resistive switching devices.Kinetically driven switching and memory phenomena at the interface between a proton-conductive electrolyte and a titanium electrode.NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO2 stack during resistive switching.Observation of conductance quantization in oxide-based resistive switching memory.On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics.A nondestructive approach to study resistive switching mechanism in metal oxide based on defect photoluminescence mapping.Microstructural transitions in resistive random access memory composed of molybdenum oxide with copper during switching cycles.Nanoscale Plasmon-Enhanced Spectroscopy in Memristive Switches.Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations.Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament.Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundariesRegenerable resistive switching in silicon oxide based nanojunctionsRecent advances in IV–VI semiconductor nanocrystals: synthesis, mechanism, and applicationsProbing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices
P2860
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P2860
In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory.
description
2011 nî lūn-bûn
@nan
2011年の論文
@ja
2011年論文
@yue
2011年論文
@zh-hant
2011年論文
@zh-hk
2011年論文
@zh-mo
2011年論文
@zh-tw
2011年论文
@wuu
2011年论文
@zh
2011年论文
@zh-cn
name
In situ observation of voltage ...... g in solid electrolyte memory.
@en
type
label
In situ observation of voltage ...... g in solid electrolyte memory.
@en
prefLabel
In situ observation of voltage ...... g in solid electrolyte memory.
@en
P2093
P2860
P356
P1433
P1476
In situ observation of voltage ...... g in solid electrolyte memory.
@en
P2093
Gyeong-Su Park
Jung-Hwan Moon
Ki-Hong Kim
Sang-Jun Choi
Soohaeng Cho
Woo-Young Yang
Xiang-Shu Li
P2860
P304
P356
10.1002/ADMA.201100507
P407
P577
2011-06-14T00:00:00Z