about
Resistive switching in silicon suboxide filmsElectrically and optically readable light emitting memoriesMultilevel memristor effect in metal-semiconductor core-shell nanoparticles tested by scanning tunneling spectroscopy.In situ imaging of the conducting filament in a silicon oxide resistive switch.Filament Geometry Induced Bipolar, Complementary, and Unipolar Resistive Switching under the Same Set Current Compliance in Pt/SiOx/TiN.Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications.In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory.Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO(x) layer.A single-device universal logic gate based on a magnetically enhanced memristor.High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.Tunable electroluminescence in planar graphene/SiO(2) memristors.Si78 double cage structure and special optical properties.Resistive switching of alkanethiolated nanoparticle monolayers patterned by electron-beam exposure.Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory.Nonvolatile memory devices based on poly(vinyl alcohol) + graphene oxide hybrid composites.Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor.Carbon nanotube network-silicon oxide non-volatile switches.Memory effects in complex materials and nanoscale systemsRegenerable resistive switching in silicon oxide based nanojunctionsDual Functions of V/SiO/AlO/pSi Device as Selector and MemoryStructural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memoryIntrinsic Resistive Switching in Bulk SiOx Films
P2860
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P2860
description
2010 nî lūn-bûn
@nan
2010年の論文
@ja
2010年学术文章
@wuu
2010年学术文章
@zh
2010年学术文章
@zh-cn
2010年学术文章
@zh-hans
2010年学术文章
@zh-my
2010年学术文章
@zh-sg
2010年學術文章
@yue
2010年學術文章
@zh-hant
name
Resistive switches and memories from silicon oxide.
@en
Resistive switches and memories from silicon oxide.
@nl
type
label
Resistive switches and memories from silicon oxide.
@en
Resistive switches and memories from silicon oxide.
@nl
prefLabel
Resistive switches and memories from silicon oxide.
@en
Resistive switches and memories from silicon oxide.
@nl
P2093
P356
P1433
P1476
Resistive switches and memories from silicon oxide.
@en
P2093
Douglas Natelson
Zhengzong Sun
P304
P356
10.1021/NL102255R
P407
P50
P577
2010-10-01T00:00:00Z