Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).
about
Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft templateEfficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes.Probing the nature of peripheral boryl groups within luminescent tellurophenes.Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy.
P2860
Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
Growth of GaN Layers on Sapphi ...... m Irradiation (Nobel Lecture).
@en
type
label
Growth of GaN Layers on Sapphi ...... m Irradiation (Nobel Lecture).
@en
prefLabel
Growth of GaN Layers on Sapphi ...... m Irradiation (Nobel Lecture).
@en
P2860
P356
P1476
Growth of GaN Layers on Sapphi ...... m Irradiation (Nobel Lecture).
@en
P2860
P304
P356
10.1002/ANIE.201501651
P407
P577
2015-06-01T00:00:00Z