Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
about
Blue Light: A Fascinating Journey (Nobel Lecture).Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture).Observation of an improved healing process in superficial skin wounds after irradiation with a blue-LED haemostatic device.Metal semiconductor field effect transistor based on single crystal GaN
P2860
Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
description
im Februar 1990 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в лютому 1990
@uk
name
Stimulated Emission Near Ultra ...... OVPE Using an AlN Buffer Layer
@en
Stimulated Emission Near Ultra ...... OVPE Using an AlN Buffer Layer
@nl
type
label
Stimulated Emission Near Ultra ...... OVPE Using an AlN Buffer Layer
@en
Stimulated Emission Near Ultra ...... OVPE Using an AlN Buffer Layer
@nl
prefLabel
Stimulated Emission Near Ultra ...... OVPE Using an AlN Buffer Layer
@en
Stimulated Emission Near Ultra ...... OVPE Using an AlN Buffer Layer
@nl
P356
P1476
Stimulated Emission Near Ultra ...... OVPE Using an AlN Buffer Layer
@en
P2093
Tsunemori Asahi
P304
P356
10.1143/JJAP.29.L205
P433
Part 2, No. 2
P577
1990-02-20T00:00:00Z