High mobility, low voltage operating C(60) based n-type organic field effect transistors.
about
Geometrical structure and interface dependence of bias stress induced threshold voltage shift in C60-based OFETs.Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistorsMorphological and Structural Investigation of Sexithiophene Growth on KCl (100).Vacuum-processed polyethylene as a dielectric for low operating voltage organic field effect transistorsOrganic flash memory on various flexible substrates for foldable and disposable electronicsOrganic Power Electronics: Transistor Operation in the kA/cm2 Regime.Strain induced anisotropic effect on electron mobility in C60 based organic field effect transistorsAnisotropic Strain Effect on Electron Transport in C60 Organic Field Effect transistorsSinglet Fission and Triplet Exciton Dynamics in Rubrene/Fullerene Heterojunctions: Implications for Electroluminescence
P2860
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P2860
High mobility, low voltage operating C(60) based n-type organic field effect transistors.
description
2011 nî lūn-bûn
@nan
2011年の論文
@ja
2011年論文
@yue
2011年論文
@zh-hant
2011年論文
@zh-hk
2011年論文
@zh-mo
2011年論文
@zh-tw
2011年论文
@wuu
2011年论文
@zh
2011年论文
@zh-cn
name
High mobility, low voltage operating C(60) based n-type organic field effect transistors.
@en
type
label
High mobility, low voltage operating C(60) based n-type organic field effect transistors.
@en
prefLabel
High mobility, low voltage operating C(60) based n-type organic field effect transistors.
@en
P2093
P50
P1433
P1476
High mobility, low voltage operating C(60) based n-type organic field effect transistors.
@en
P2093
G Schwabegger
M Baumgartner
M Irimia-Vladu
Mujeeb Ullah
P2860
P304
P356
10.1016/J.SYNTHMET.2011.06.042
P478
P577
2011-10-01T00:00:00Z