Titanium trisulfide monolayer: theoretical prediction of a new direct-gap semiconductor with high and anisotropic carrier mobility.
about
Tinselenidene: a Two-dimensional Auxetic Material with Ultralow Lattice Thermal Conductivity and Ultrahigh Hole Mobility.Simulation Evidence of Hexagonal-to-Tetragonal ZnSe Structure Transition: A Monolayer Material with a Wide-Range Tunable Direct BandgapUnusual lattice vibration characteristics in whiskers of the pseudo-one-dimensional titanium trisulfide TiS3.The stability of aluminium oxide monolayer and its interface with two-dimensional materialsTitanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties.Highly Anisotropic Sb2 Se3 Nanosheets: Gentle Exfoliation from the Bulk Precursors Possessing 1D Crystal Structure.Robust band gap of TiS3 nanofilms.Theoretical prediction of high electron mobility in multilayer MoS2 heterostructured with MoSe2.Environmental stability of 2D anisotropic tellurium containing nanomaterials: anisotropic to isotropic transition.Monolayer AgBiP2Se6: an atomically thin ferroelectric semiconductor with out-plane polarization.Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities.High-mobility anisotropic transport in few-layer γ-B28 films.Predicting a graphene-like WB4 nanosheet with a double Dirac cone, an ultra-high Fermi velocity and significant gap opening by spin-orbit coupling.General criterion to distinguish between Schottky and Ohmic contacts at the metal/two-dimensional semiconductor interface.A two-dimensional tetragonal yttrium nitride monolayer: a ferroelastic semiconductor with switchable anisotropic properties.TiS3 sheet based van der Waals heterostructures with a tunable Schottky barrier.A CO monolayer: first-principles design of a new direct band-gap semiconductor with excellent mechanical properties.Dielectrophoretic assembly of liquid-phase-exfoliated TiS3 nanoribbons for photodetecting applications.Two-dimensional BX (X = P, As, Sb) semiconductors with mobilities approaching graphene.Strain enhancement of acoustic phonon limited mobility in monolayer TiS3.Tuning the electronic properties of transition-metal trichalcogenides via tensile strain.Single layer of MX₃ (M = Ti, Zr; X = S, Se, Te): a new platform for nano-electronics and optics.
P2860
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P2860
Titanium trisulfide monolayer: theoretical prediction of a new direct-gap semiconductor with high and anisotropic carrier mobility.
description
2015 nî lūn-bûn
@nan
2015年の論文
@ja
2015年論文
@yue
2015年論文
@zh-hant
2015年論文
@zh-hk
2015年論文
@zh-mo
2015年論文
@zh-tw
2015年论文
@wuu
2015年论文
@zh
2015年论文
@zh-cn
name
Titanium trisulfide monolayer: ...... anisotropic carrier mobility.
@en
Titanium trisulfide monolayer: ...... anisotropic carrier mobility.
@nl
type
label
Titanium trisulfide monolayer: ...... anisotropic carrier mobility.
@en
Titanium trisulfide monolayer: ...... anisotropic carrier mobility.
@nl
prefLabel
Titanium trisulfide monolayer: ...... anisotropic carrier mobility.
@en
Titanium trisulfide monolayer: ...... anisotropic carrier mobility.
@nl
P2860
P356
P1476
Titanium trisulfide monolayer: ...... anisotropic carrier mobility.
@en
P2093
Xiao Cheng Zeng
P2860
P304
P356
10.1002/ANIE.201502107
P407
P50
P577
2015-05-12T00:00:00Z
P5875
P698
P818
1501.02313