Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering.
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Exploring atomic defects in molybdenum disulphide monolayers.Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.Sulfur vacancy activated field effect transistors based on ReS2 nanosheets.Atomic Defects in Two-Dimensional Materials: From Single-Atom Spectroscopy to Functionalities in Opto-/Electronics, Nanomagnetism, and Catalysis.Interlayer resistance of misoriented MoS2.Surface functionalization of two-dimensional metal chalcogenides by Lewis acid-base chemistry.Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface.Preferential S/Se occupation in an anisotropic ReS2(1-x)Se2x monolayer alloy.Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets.Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition.Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors.Direct Growth of High Mobility and Low-Noise Lateral MoS2 -Graphene Heterostructure Electronics.Air Passivation of Chalcogen Vacancies in Two-Dimensional Semiconductors.Synergistic Phase and Disorder Engineering in 1T-MoSe2 Nanosheets for Enhanced Hydrogen-Evolution Reaction.Towards an all-in fiber photodetector by directly bonding few-layer molybdenum disulfide to a fiber facet.Towards a Comprehensive Understanding of the Reaction Mechanisms Between Defective MoS2 and Thiol Molecules.Functionalization of Two-Dimensional Transition-Metal Dichalcogenides.Sulfur vacancy-induced reversible doping of transition metal disulfides via hydrazine treatment.Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2 through a Self-Limited Growth Strategy by Interface Engineering.Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy.Engineering Chemically Active Defects in Monolayer MoS2 Transistors via Ion-Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols.High-Electron-Mobility and Air-Stable 2D Layered PtSe2 FETs.High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer.Extraordinarily Strong Interlayer Interaction in 2D Layered PtS2.Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening.High-Performance Monolayer WS2 Field-Effect Transistors on High-κ Dielectrics.Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus.Dynamic In-Situ Experimentation on Nanomaterials at the Atomic Scale.High Performance Amplifier Element Realization via MoS2/GaTe Heterostructures.Nonvolatile infrared memory in MoS2/PbS van der Waals heterostructures.2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronicsNanoscale enhancement of photoconductivity by localized charge traps in the grain structures of monolayer MoSCharge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides
P2860
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P2860
Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
Towards intrinsic charge trans ...... ect and interface engineering.
@en
Towards intrinsic charge trans ...... ect and interface engineering.
@nl
type
label
Towards intrinsic charge trans ...... ect and interface engineering.
@en
Towards intrinsic charge trans ...... ect and interface engineering.
@nl
prefLabel
Towards intrinsic charge trans ...... ect and interface engineering.
@en
Towards intrinsic charge trans ...... ect and interface engineering.
@nl
P2093
P2860
P50
P356
P1476
Towards intrinsic charge trans ...... ect and interface engineering.
@en
P2093
Baigeng Wang
Gang Zhang
Yong Wei Zhang
Yuting Shen
P2860
P2888
P356
10.1038/NCOMMS6290
P407
P577
2014-10-20T00:00:00Z