Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
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Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
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2014年の論文
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2014年論文
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2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
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2014年論文
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2014年论文
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2014年论文
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name
Beneficial defects: exploiting ...... rowth of Ge in-plane nanowires
@en
Beneficial defects: exploiting ...... owth of Ge in-plane nanowires.
@nl
type
label
Beneficial defects: exploiting ...... rowth of Ge in-plane nanowires
@en
Beneficial defects: exploiting ...... owth of Ge in-plane nanowires.
@nl
prefLabel
Beneficial defects: exploiting ...... rowth of Ge in-plane nanowires
@en
Beneficial defects: exploiting ...... owth of Ge in-plane nanowires.
@nl
P2093
P50
P356
P1476
Beneficial defects: exploiting ...... rowth of Ge in-plane nanowires
@en
P2093
Anna Sgarlata
Luca Persichetti
Marco Notarianni
Massimo Fanfoni
Valeria Cherubini
P2888
P356
10.1186/1556-276X-9-358
P577
2014-07-16T00:00:00Z
P6179
1046567025