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Q39146051-2B96661A-1CC5-47A4-97A7-44AA21EAAEB0
Q39146051-2B96661A-1CC5-47A4-97A7-44AA21EAAEB0
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http://www.wikidata.org/entity/statement/Q39146051-2B96661A-1CC5-47A4-97A7-44AA21EAAEB0
Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
P2860
Q39146051-2B96661A-1CC5-47A4-97A7-44AA21EAAEB0
BestRank
Statement
http://www.wikidata.org/entity/statement/Q39146051-2B96661A-1CC5-47A4-97A7-44AA21EAAEB0
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bb11de870bdd80668299858b2a550ce753be99a3
P2860
High capacity Li ion battery anodes using ge nanowires.