Emerging Applications for High K Materials in VLSI Technology.

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Work Function Adjustment by Using Dipole Engineering for TaN-Al₂O₃-Si₃N₄-HfSiOx-Silicon Nonvolatile Memory.Effect of Growth Temperature on the Structural and Electrical Properties of ZrO₂ Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH₃)₂]₃/C₇H₈ Cocktail Precursor.

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P2860

Emerging Applications for High K Materials in VLSI Technology.

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Emerging Applications for High K Materials in VLSI Technology.

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Emerging Applications for High K Materials in VLSI Technology.

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Emerging Applications for High K Materials in VLSI Technology.

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Emerging Applications for High K Materials in VLSI Technology.

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Emerging Applications for High K Materials in VLSI Technology.

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Robert D Clark

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Development of hafnium based high-k materials—A review

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Ferroelectricity in hafnium oxide thin films

Graphene-Dielectric Integration for Graphene Transistors

HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

Academic and industry research progress in germanium nanodevices.

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits.

Carbon nanotubes: properties and application

Carbon-nanostructures coated/decorated by atomic layer deposition: Growth and applications

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2913-2944

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10.3390/MA7042913

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Emerging Applications for High K Materials in VLSI Technology.

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P2860

P2860

Emerging Applications for High K Materials in VLSI Technology.

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