Sericin for resistance switching device with multilevel nonvolatile memory. - Wikidata - awgldk - TriplyDB

Sericin for resistance switching device with multilevel nonvolatile memory.

Sericin for resistance switching device with multilevel nonvolatile memory.

http://www.wikidata.org/entity/Q39376667

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Nonvolatile bio-memristor fabricated with egg albumen film.Towards Highly-Efficient Phototriggered Data Storage by Utilizing a Diketopyrrolopyrrole-Based Photoelectronic Small Molecule.Thermal crosstalk in 3-dimensional RRAM crossbar array.Artificial Synaptic Devices Based on Natural Chicken Albumen Coupled Electric-Double-Layer Transistors.Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics.Silk Fibroin for Flexible Electronic Devices.Resistive Switching Memory Devices Based on Proteins.Biodegradable resistive switching memory based on magnesium difluoride.Flexible bio-memristive devices based on chicken egg albumen:Au@SiO2 core-shell nanoparticle nanocomposites.Silk protein lithography as a route to fabricate sericin microarchitectures.A Silk Fibroin Bio-Transient Solution Processable Memristor.Nonvolatile Bio-Memristor Based on Silkworm Hemolymph Proteins.Wearable Intrinsically Soft, Stretchable, Flexible Devices for Memories and Computing.Stretchable Motion Memory Devices Based on Mechanical Hybrid Materials.Skin-Inspired Haptic Memory Arrays with an Electrically Reconfigurable Architecture.Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin.Physically Transient Resistive Switching Memory Based on Silk Protein.Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor.Effects of drying temperature and ethanol concentration on bipolar switching characteristics of natural Aloe vera-based memory devices.Multilevel conductance switching of a memory device induced by enhanced intermolecular charge transfer.Organic non-volatile resistive photo-switches for flexible image detector arrays.Self-Protection of Electrochemical Storage Devices via a Thermal Reversible Sol-Gel Transition.Phototunable Biomemory Based on Light-Mediated Charge Trap Resistive switching memory using biomaterials Biocompatible and Flexible Chitosan-Based Resistive Switching Memory with Magnesium Electrodes

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P2860

Sericin for resistance switching device with multilevel nonvolatile memory.

http://www.wikidata.org/entity/Q39376667

description

2013 nî lūn-bûn

@nan

2013年の論文

@ja

2013年学术文章

@wuu

2013年学术文章

@zh-cn

2013年学术文章

@zh-hans

2013年学术文章

@zh-my

2013年学术文章

@zh-sg

2013年學術文章

@yue

2013年學術文章

@zh

2013年學術文章

@zh-hant

name

Sericin for resistance switching device with multilevel nonvolatile memory.

@en

Sericin for resistance switching device with multilevel nonvolatile memory.

@nl

type

label

Sericin for resistance switching device with multilevel nonvolatile memory.

@en

Sericin for resistance switching device with multilevel nonvolatile memory.

@nl

prefLabel

Sericin for resistance switching device with multilevel nonvolatile memory.

@en

Sericin for resistance switching device with multilevel nonvolatile memory.

@nl

P1433

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P1433

Advanced Materials

P1476

Sericin for resistance switching device with multilevel nonvolatile memory

@en

P2093

Fanben Meng

http://www.w3.org/2001/XMLSchema#string

Hong Wang

http://www.w3.org/2001/XMLSchema#string

Liyan Zheng

http://www.w3.org/2001/XMLSchema#string

Xiaotian Wang

http://www.w3.org/2001/XMLSchema#string

Yuanjun Liu

http://www.w3.org/2001/XMLSchema#string

Yueyue Jiang

http://www.w3.org/2001/XMLSchema#string

Yurong Cai

http://www.w3.org/2001/XMLSchema#string

P2860

Nanoionics-based resistive switching memories

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots.

Tailoring of molecular planarity to reduce charge injection barrier for high-performance small-molecule-based ternary memory device with low threshold voltage.

Proteins as solid-state electronic conductors.

Silicon electronics on silk as a path to bioresorbable, implantable devices

Silk Fibroin Microfluidic Devices.

Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament.

Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications.

Transferable and flexible label-like macromolecular memory on arbitrary substrates with high performance and a facile methodology.

P304

5498-5503

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P31

scholarly article

P356

10.1002/ADMA.201301983

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P407

P433

38

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P478

25

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P577

2013-07-29T00:00:00Z

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P698

23893500

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