Generic relevance of counter charges for cation-based nanoscale resistive switching memories.
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Effects of a Cu x O Buffer Layer on a SiO x -Based Memory Device in a Vaporless EnvironmentModulating memristive performance of hexagonal WO3 nanowire by water-oxidized hydrogen ion implantationDemonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications.Solid-state electrochemistry on the nanometer and atomic scales: the scanning probe microscopy approach.Memristive and neuromorphic behavior in a Li(x)CoO2 nanobattery.A Silk Fibroin Bio-Transient Solution Processable Memristor.Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devices.A Synaptic Transistor based on Quasi-2D Molybdenum Oxide.Electrochemical-reaction-induced synaptic plasticity in MoOx-based solid state electrochemical cells.Memristive Physically Evolving Networks Enabling the Emulation of Heterosynaptic Plasticity.Electrochemical metallization switching with a platinum group metal in different oxides.Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces.Nanoscale Plasmon-Enhanced Spectroscopy in Memristive Switches.Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations.Nanoscale memristive radiofrequency switches.Manganite-based memristive heterojunction with tunable non-linear I-V characteristics.Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5 -Based Memristors.Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours.Kinetic factors determining conducting filament formation in solid polymer electrolyte based planar devices.Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells.Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron NitrideProbing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devicesReliable current changes with selectivity ratio above 109 observed in lightly doped zinc oxide filmsNanoarchitectonics: a new materials horizon for nanotechnology
P2860
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P2860
Generic relevance of counter charges for cation-based nanoscale resistive switching memories.
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
2013年论文
@zh
2013年论文
@zh-cn
name
Generic relevance of counter c ...... resistive switching memories.
@en
Generic relevance of counter c ...... resistive switching memories.
@nl
type
label
Generic relevance of counter c ...... resistive switching memories.
@en
Generic relevance of counter c ...... resistive switching memories.
@nl
prefLabel
Generic relevance of counter c ...... resistive switching memories.
@en
Generic relevance of counter c ...... resistive switching memories.
@nl
P2093
P356
P1433
P1476
Generic relevance of counter c ...... resistive switching memories.
@en
P2093
Ilia Valov
Masakazu Aono
Rainer Waser
Stefan Tappertzhofen
Tohru Tsuruoka
Tsuyoshi Hasegawa
P304
P356
10.1021/NN4026614
P407
P577
2013-06-24T00:00:00Z