about
Nano-volcanic Eruption of SilverThree-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristorsTrilayer Tunnel Selectors for Memristor Memory CellsSub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor.Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices.Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory.A novel true random number generator based on a stochastic diffusive memristor.An artificial nociceptor based on a diffusive memristor.Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.Electrochemical metallization switching with a platinum group metal in different oxides.Zero-static power radio-frequency switches based on MoS2 atomristors.
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P2860
description
2015 nî lūn-bûn
@nan
2015年の論文
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2015年学术文章
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2015年学术文章
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2015年学术文章
@zh-cn
2015年学术文章
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2015年学术文章
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2015年学术文章
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2015年學術文章
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2015年學術文章
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name
Nanoscale memristive radiofrequency switches.
@en
Nanoscale memristive radiofrequency switches.
@nl
type
label
Nanoscale memristive radiofrequency switches.
@en
Nanoscale memristive radiofrequency switches.
@nl
prefLabel
Nanoscale memristive radiofrequency switches.
@en
Nanoscale memristive radiofrequency switches.
@nl
P2860
P356
P1476
Nanoscale memristive radiofrequency switches
@en
P2093
Joseph C Bardin
Mohammad Ghadiri-Sadrabadi
P2860
P2888
P356
10.1038/NCOMMS8519
P407
P577
2015-06-25T00:00:00Z