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Probing nanoscale oxygen ion motion in memristive systemsTaOx-based resistive switching memories: prospective and challenges.The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template.In situ observation of filamentary conducting channels in an asymmetric Ta₂O5-x/TaO2-x bilayer structure.Multilevel memristor effect in metal-semiconductor core-shell nanoparticles tested by scanning tunneling spectroscopy.RRAM characteristics using a new Cr/GdOx/TiN structure.Implementation of Complete Boolean Logic Functions in Single Complementary Resistive SwitchInterfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures.Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications.Individual Zn2SnO4-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states.Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory.Engineering incremental resistive switching in TaOx based memristors for brain-inspired computing.Stateful characterization of resistive switching TiO2 with electron beam induced currents.Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM.On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics.Transparent amorphous strontium titanate resistive memories with transient photo-response.Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device.Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays.Evolution of Ni nanofilaments and electromagnetic coupling in the resistive switching of NiO.Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.Tunable, ultralow-power switching in memristive devices enabled by a heterogeneous graphene-oxide interface.Oxide resistive memory with functionalized graphene as built-in selector element.Multiple resistive switching in core–shell ZnO nanowires exhibiting tunable surface statesSwitchable Cu2O/WOx p–n junction for high density crossbar arraysDual Functions of V/SiO/AlO/pSi Device as Selector and Memory
P2860
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P2860
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
2013年论文
@zh
2013年论文
@zh-cn
name
Oxide heterostructure resistive memory.
@en
Oxide heterostructure resistive memory.
@nl
type
label
Oxide heterostructure resistive memory.
@en
Oxide heterostructure resistive memory.
@nl
prefLabel
Oxide heterostructure resistive memory.
@en
Oxide heterostructure resistive memory.
@nl
P356
P1433
P1476
Oxide heterostructure resistive memory.
@en
P2093
ShinHyun Choi
P304
P356
10.1021/NL401287W
P407
P577
2013-06-04T00:00:00Z