Dual Functions of V/SiO/AlO/pSi Device as Selector and Memory

about

Dual Functions of V/SiO/AlO/pSi Device as Selector and Memory

Item

http://www.wikidata.org/entity/Q58714827

description

im August 2018 veröffentlichter wissenschaftlicher Artikel

@de

scientific article published on 23 August 2018

@en

wetenschappelijk artikel

@nl

наукова стаття, опублікована в серпні 2018

@uk

name

Dual Functions of V/SiO/AlO/pSi Device as Selector and Memory

@en

Dual Functions of V/SiO/AlO/pSi Device as Selector and Memory

@nl

type

Item

label

Dual Functions of V/SiO/AlO/pSi Device as Selector and Memory

@en

Dual Functions of V/SiO/AlO/pSi Device as Selector and Memory

@nl

prefLabel

Dual Functions of V/SiO/AlO/pSi Device as Selector and Memory

@en

Dual Functions of V/SiO/AlO/pSi Device as Selector and Memory

@nl

P1476

Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory

@en

P2093

Byung-Gook Park

http://www.w3.org/2001/XMLSchema#string

Chih-Yang Lin

http://www.w3.org/2001/XMLSchema#string

Hyungjin Kim

http://www.w3.org/2001/XMLSchema#string

Min-Hwi Kim

http://www.w3.org/2001/XMLSchema#string

Tae-Hyeon Kim

http://www.w3.org/2001/XMLSchema#string

Yao-Feng Chang

http://www.w3.org/2001/XMLSchema#string

Ying-Chen Chen

http://www.w3.org/2001/XMLSchema#string

P2860

Electrically tailored resistance switching in silicon oxide

Complementary resistive switches for passive nanocrossbar memories

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

TaOx-based resistive switching memories: prospective and challenges.

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode.

Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering.

Reliable control of filament formation in resistive memories by self-assembled nanoinsulators derived from a block copolymer.

Oxide heterostructure resistive memory.

Diode-less bilayer oxide (WO(x)-NbO(x)) device for cross-point resistive memory applications.

Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.

P2888

s11671-018-2660-9

P304

252

http://www.w3.org/2001/XMLSchema#string

P31

scholarly article

P356

10.1186/S11671-018-2660-9

http://www.w3.org/2001/XMLSchema#string

P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P50

Sungjun Kim

P577

2018-08-23T00:00:00Z

http://www.w3.org/2001/XMLSchema#dateTime

P6179

1106321040

http://www.w3.org/2001/XMLSchema#string

P698

30141145

http://www.w3.org/2001/XMLSchema#string

P921

condensed matter physics

P932

6107449

http://www.w3.org/2001/XMLSchema#string