Diode-less bilayer oxide (WO(x)-NbO(x)) device for cross-point resistive memory applications.
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Engineering nonlinearity into memristors for passive crossbar applicationsReliability of neuronal information conveyed by unreliable neuristor-based leaky integrate-and-fire neurons: a model study.Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application.The impact of nitrogen doping and reduced-niobium self-doping on the photocatalytic activity of ultra-thin Nb3O8- nanosheets.Conduction mechanism of a TaO(x)-based selector and its application in crossbar memory arrays.Bipolar one diode-one resistor integration for high-density resistive memory applications.Effect of Bilayer CeO/ZnO and ZnO/CeO Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile MemoryThreshold switching and electrical self-oscillation in niobium oxide filmsSelf-assembly of an NbO2 interlayer and configurable resistive switching in Pt/Nb/HfO2/Pt structuresDual Functions of V/SiO/AlO/pSi Device as Selector and Memory
P2860
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P2860
Diode-less bilayer oxide (WO(x)-NbO(x)) device for cross-point resistive memory applications.
description
2011 nî lūn-bûn
@nan
2011年の論文
@ja
2011年論文
@yue
2011年論文
@zh-hant
2011年論文
@zh-hk
2011年論文
@zh-mo
2011年論文
@zh-tw
2011年论文
@wuu
2011年论文
@zh
2011年论文
@zh-cn
name
Diode-less bilayer oxide (WO(x ...... resistive memory applications.
@en
Diode-less bilayer oxide
@nl
type
label
Diode-less bilayer oxide (WO(x ...... resistive memory applications.
@en
Diode-less bilayer oxide
@nl
prefLabel
Diode-less bilayer oxide (WO(x ...... resistive memory applications.
@en
Diode-less bilayer oxide
@nl
P2093
P356
P1433
P1476
Diode-less bilayer oxide (WO(x ...... resistive memory applications
@en
P2093
Hyunsang Hwang
Joonmyoung Lee
Jubong Park
Jungho Shin
Myungwoo Son
Sangsu Park
Sharif Md Sadaf
P304
P356
10.1088/0957-4484/22/47/475702
P50
P577
2011-11-04T00:00:00Z