High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition.
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Optical properties and bandgap evolution of ALD HfSiOx films.Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application.Scalable cross-point resistive switching memory and mechanism through an understanding of H2O2/glucose sensing using an IrOx/Al2O3/W structure.Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi0.95 Co0.05 O3 Film.Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures
P2860
Q35264912-62943A1A-33B7-493E-B47D-75D0A1883FDAQ35267813-9263AF47-2174-4EBC-AB2F-23F8244CA3C8Q37014906-E28B8FC1-47D0-43DA-822E-FBE37671A418Q37359692-BBE09D8E-F79C-4F27-AFB7-C9B44182B111Q39020535-4FCC7B73-213A-4A33-AF98-00B753F0CD53Q47652672-FC934691-0C0F-4F48-A431-214227CAC3CDQ50585907-FD69167D-0B5B-4450-AFAA-0F3DEA09713DQ59191469-081D9574-6526-4DB0-99BA-55909E808675
P2860
High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition.
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年論文
@yue
2013年論文
@zh-hant
2013年論文
@zh-hk
2013年論文
@zh-mo
2013年論文
@zh-tw
2013年论文
@wuu
2013年论文
@zh
2013年论文
@zh-cn
name
High-performance bilayer flexi ...... ermal atomic layer deposition.
@en
type
label
High-performance bilayer flexi ...... ermal atomic layer deposition.
@en
prefLabel
High-performance bilayer flexi ...... ermal atomic layer deposition.
@en
P2093
P2860
P356
P1476
High-performance bilayer flexi ...... ermal atomic layer deposition.
@en
P2093
David Wei Zhang
Peng-Fei Wang
Qing-Qing Sun
Run-Chen Fang
P2860
P2888
P356
10.1186/1556-276X-8-92
P577
2013-02-19T00:00:00Z
P5875
P6179
1013922850