Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
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Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
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article científic
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article scientifique
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articolo scientifico
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artigo científico
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bilimsel makale
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scientific article published on 17 June 2016
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vedecký článok
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vetenskaplig artikel
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videnskabelig artikel
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vědecký článek
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Material insights of HfO2-base ...... batch atomic layer deposition.
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Material insights of HfO2-base ...... batch atomic layer deposition.
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Material insights of HfO2-base ...... batch atomic layer deposition.
@en
Material insights of HfO2-base ...... batch atomic layer deposition.
@nl
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Material insights of HfO2-base ...... batch atomic layer deposition.
@en
Material insights of HfO2-base ...... batch atomic layer deposition.
@nl
P2093
P2860
P356
P1433
P1476
Material insights of HfO2-base ...... batch atomic layer deposition
@en
P2093
Eduardo Perez
Hee-Dong Kim
Ioan Costina
Markus Andreas Schubert
Peter Zaumseil
Robin Roelofs
P2860
P2888
P356
10.1038/SREP28155
P407
P577
2016-06-17T00:00:00Z