Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer.
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Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer.
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2017 nî lūn-bûn
@nan
2017年の論文
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2017年論文
@yue
2017年論文
@zh-hant
2017年論文
@zh-hk
2017年論文
@zh-mo
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@zh-tw
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name
Ternary Resistance Switching M ...... n a Polystyrene Polymer Layer.
@en
type
label
Ternary Resistance Switching M ...... n a Polystyrene Polymer Layer.
@en
prefLabel
Ternary Resistance Switching M ...... n a Polystyrene Polymer Layer.
@en
P2093
P2860
P1433
P1476
Ternary Resistance Switching M ...... n a Polystyrene Polymer Layer.
@en
P2093
Chunpeng Ai
Dianzhong Wen
Yanmei Sun
P2860
P2888
P356
10.1038/S41598-017-04299-Z
P407
P577
2017-06-21T00:00:00Z
P6179
1086055776