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Q41073360-49653EB6-79A5-4CF8-B22D-43F4AE89813B
Q41073360-49653EB6-79A5-4CF8-B22D-43F4AE89813B
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http://www.wikidata.org/entity/statement/Q41073360-49653EB6-79A5-4CF8-B22D-43F4AE89813B
Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer.
P2860
Q41073360-49653EB6-79A5-4CF8-B22D-43F4AE89813B
BestRank
Statement
http://www.wikidata.org/entity/statement/Q41073360-49653EB6-79A5-4CF8-B22D-43F4AE89813B
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wasDerivedFrom
8cd47e5e3a5719a456f8f42339c0d2a1c8e73145
P2860
Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.