Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors.
about
Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole ContactsA kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides.Diversity of trion states and substrate effects in the optical properties of an MoS2 monolayer.Electronic structures and transport properties of a MoS2-NbS2 nanoribbon lateral heterostructure.An origin of unintentional doping in transition metal dichalcogenides: the role of hydrogen impurities.High-Performance Solid-State Thermionic Energy Conversion Based on 2D van der Waals Heterostructures: A First-Principles Study.
P2860
Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors.
description
2016 nî lūn-bûn
@nan
2016年の論文
@ja
2016年論文
@yue
2016年論文
@zh-hant
2016年論文
@zh-hk
2016年論文
@zh-mo
2016年論文
@zh-tw
2016年论文
@wuu
2016年论文
@zh
2016年论文
@zh-cn
name
Monolayer MoS2 Bandgap Modulat ...... d Tunable Bandgap Transistors.
@en
type
label
Monolayer MoS2 Bandgap Modulat ...... d Tunable Bandgap Transistors.
@en
prefLabel
Monolayer MoS2 Bandgap Modulat ...... d Tunable Bandgap Transistors.
@en
P2093
P2860
P356
P1433
P1476
Monolayer MoS2 Bandgap Modulat ...... d Tunable Bandgap Transistors.
@en
P2093
Junga Ryou
Kyeongjae Cho
Santosh Kc
Yong-Sung Kim
P2860
P2888
P356
10.1038/SREP29184
P407
P577
2016-07-05T00:00:00Z
P6179
1029821888