Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices.
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Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices.
description
2017 nî lūn-bûn
@nan
2017年の論文
@ja
2017年論文
@yue
2017年論文
@zh-hant
2017年論文
@zh-hk
2017年論文
@zh-mo
2017年論文
@zh-tw
2017年论文
@wuu
2017年论文
@zh
2017年论文
@zh-cn
name
Atomic structure and electroni ...... ling magnetoresistive devices.
@en
type
label
Atomic structure and electroni ...... ling magnetoresistive devices.
@en
prefLabel
Atomic structure and electroni ...... ling magnetoresistive devices.
@en
P2093
P2860
P356
P1433
P1476
Atomic structure and electroni ...... lling magnetoresistive devices
@en
P2093
Hideo Ohno
Hideo Sato
Keith P McKenna
Mitsuhiro Saito
Shoji Ikeda
Yuichi Ikuhara
P2860
P2888
P356
10.1038/SREP45594
P407
P577
2017-04-04T00:00:00Z