Large area growth and electrical properties of p-type WSe2 atomic layers.
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Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide SubstratesGiant photoluminescence enhancement in tungsten-diselenide-gold plasmonic hybrid structures.Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family.Photocurrent generation with two-dimensional van der Waals semiconductors.Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.Ultrafast Self-Limited Growth of Strictly Monolayer WSe2 Crystals.Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities.Tuning Coupling Behavior of Stacked Heterostructures Based on MoS2, WS2, and WSe2.Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.Synthesis of 2D Layered BiI3 Nanoplates, BiI3 /WSe2 van der Waals Heterostructures and Their Electronic, Optoelectronic Properties.Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets.Thermodynamically Stable Synthesis of Large-Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n-n Heterojunction Devices.Monolayer Tungsten Disulfide (WS2 ) via Chlorine-Driven Chemical Vapor Transport.Solid-Vapor Reaction Growth of Transition-Metal Dichalcogenide Monolayers.Interaction between H2O, N2, CO, NO, NO2 and N2O molecules and a defective WSe2 monolayer.Metal-Semiconductor Phase-Transition in WSe2(1-x) Te2x Monolayer.Ultrafast Growth of High-Quality Monolayer WSe2 on Au.High-Electron-Mobility and Air-Stable 2D Layered PtSe2 FETs.MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2.Chemical Vapor Deposition of Large-Sized Hexagonal WSe₂ Crystals on Dielectric Substrates.Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide.Batch production of 6-inch uniform monolayer molybdenum disulfide catalyzed by sodium in glass.Isoelectronic Tungsten Doping in Monolayer MoSe2 for Carrier Type Modulation.Tungsten dichalcogenides (WS2, WSe2, and WTe2): materials chemistry and applicationsElectric-double-layer doping of WSe2 field-effect transistors using polyethylene-oxide cesium perchlorateEnhanced Performance of a Monolayer MoS/WSe Heterojunction as a Photoelectrochemical CathodeSolid-Vapor Reaction Growth of Transition-Metal Dichalcogenide Monolayers
P2860
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P2860
Large area growth and electrical properties of p-type WSe2 atomic layers.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
Large area growth and electrical properties of p-type WSe2 atomic layers.
@en
Large area growth and electrical properties of p-type WSe2 atomic layers.
@nl
type
label
Large area growth and electrical properties of p-type WSe2 atomic layers.
@en
Large area growth and electrical properties of p-type WSe2 atomic layers.
@nl
prefLabel
Large area growth and electrical properties of p-type WSe2 atomic layers.
@en
Large area growth and electrical properties of p-type WSe2 atomic layers.
@nl
P2093
P2860
P356
P1433
P1476
Large area growth and electrical properties of p-type WSe2 atomic layers.
@en
P2093
Hailong Zhou
Jonathan C Shaw
Nathan O Weiss
Xiangfeng Duan
Xiaoqing Huang
Zhaoyang Lin
P2860
P304
P356
10.1021/NL504256Y
P407
P577
2014-12-08T00:00:00Z