High-performance single layered WSe₂ p-FETs with chemically doped contacts.
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First-Principles Determination of Ultralow Thermal Conductivity of monolayer WSe2Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole ContactsDefect-mediated phonon dynamics in TaS2 and WSe2Few-layer HfS2 transistors.Photoresponsive and gas sensing field-effect transistors based on multilayer WS₂ nanoflakes.Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides.Large-area synthesis of monolayer WSe₂ on a SiO₂/Si substrate and its device applications.Controlled vapor phase growth of single crystalline, two-dimensional GaSe crystals with high photoresponse.Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenidesAmbipolar MoTe2 transistors and their applications in logic circuits.Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics.Spin-orbital effects in metal-dichalcogenide semiconducting monolayersFew-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.Influence of post-annealing on the off current of MoS2 field-effect transistorsA high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.The renaissance of black phosphorusHigh-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN filmsIn situ degradation studies of two-dimensional WSe₂-graphene heterostructures.A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy.MoS2 Heterojunctions by Thickness Modulation.Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction.Hybrid Bilayer WSe2 -CH3 NH3 PbI3 Organolead Halide Perovskite as a High-Performance Photodetector.Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.Quantum of optical absorption in two-dimensional semiconductors.Polarity control in WSe2 double-gate transistors.Ferromagnetism in exfoliated tungsten disulfide nanosheetsGate-tunable carbon nanotube-MoS2 heterojunction p-n diode.Superior field emission properties of layered WS2-RGO nanocomposites.Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent ElectrodeMetal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors.Accurate extraction of WSe2 FETs parameters by using pulsed I-V method at various temperatures.Nanoelectronic circuits based on two-dimensional atomic layer crystals.Photocurrent generation with two-dimensional van der Waals semiconductors.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Interfacial properties of borophene contacts with two-dimensional semiconductors.Electrical contacts to two-dimensional semiconductors.Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors.Ab initio performance predictions of single-layer In-V tunnel field-effect transistors.Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides.Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.
P2860
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P2860
High-performance single layered WSe₂ p-FETs with chemically doped contacts.
description
2012 nî lūn-bûn
@nan
2012年の論文
@ja
2012年学术文章
@wuu
2012年学术文章
@zh
2012年学术文章
@zh-cn
2012年学术文章
@zh-hans
2012年学术文章
@zh-my
2012年学术文章
@zh-sg
2012年學術文章
@yue
2012年學術文章
@zh-hant
name
High-performance single layered WSe₂ p-FETs with chemically doped contacts.
@en
High-performance single layered WSe₂ p-FETs with chemically doped contacts.
@nl
type
label
High-performance single layered WSe₂ p-FETs with chemically doped contacts.
@en
High-performance single layered WSe₂ p-FETs with chemically doped contacts.
@nl
prefLabel
High-performance single layered WSe₂ p-FETs with chemically doped contacts.
@en
High-performance single layered WSe₂ p-FETs with chemically doped contacts.
@nl
P2093
P356
P1433
P1476
High-performance single layered WSe₂ p-FETs with chemically doped contacts.
@en
P2093
Kuniharu Takei
Steven Chuang
Ting Chia Chang
Toshitake Takahashi
P304
P356
10.1021/NL301702R
P407
P577
2012-06-19T00:00:00Z