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Q37404624-D7CD411A-B95F-4247-819E-5F2935CF1E81
Q37404624-D7CD411A-B95F-4247-819E-5F2935CF1E81
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http://www.wikidata.org/entity/statement/Q37404624-D7CD411A-B95F-4247-819E-5F2935CF1E81
Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode
P2860
Q37404624-D7CD411A-B95F-4247-819E-5F2935CF1E81
BestRank
Statement
http://www.wikidata.org/entity/statement/Q37404624-D7CD411A-B95F-4247-819E-5F2935CF1E81
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0d9486cfc83c450a9d7e44b33f4a678b58a45a03
P2860
High-performance single layered WSe₂ p-FETs with chemically doped contacts.