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Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure.Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors.Giant Negative Electrocaloric Effects of Hf0.5 Zr0.5 O2 Thin Films.Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films.Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers.Two-step polarization switching mediated by a nonpolar intermediate phase in Hf0.4Zr0.6O2 thin films.A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2 films by pulse-switching measurement.Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films.Understanding the formation of the metastable ferroelectric phase in hafnia-zirconia solid solution thin films.Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment.Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.Optimizing process conditions for improved Hf 1−x Zr x O 2 ferroelectric capacitor performanceLa-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitorsFluorite-structure antiferroelectricsMorphotropic Phase Boundary of Hf1- xZr xO2 Thin Films for Dynamic Random Access Memories
P50
Q36443404-B4B91721-BDA4-459A-8195-0E68467F8FBEQ36569592-A82137A4-BA6A-4C4B-A4BA-8D7EB61B18BFQ38412983-7988078E-A05D-4E0A-B827-C98F9EF8F68FQ38413977-606708D0-2561-494B-AC59-5E123BD61F6DQ38414083-3713CF79-D4E6-4309-8C26-CB46720E3456Q38418646-1552917D-1E4A-49EB-AF4F-89A9F0C5B2F0Q38421029-78944B64-2820-46CC-8285-176F4D578F94Q38428643-4B2323B4-86F6-455D-84FA-99F54C3081BAQ47214953-BF627258-9F07-45E3-8CFD-781953E88B76Q47247917-1C3871D9-391B-48A4-9916-139F5C1DD5D6Q47309060-893D827F-E3BE-4613-90BA-EA7CA29E5AC6Q47954236-A6887DFE-F41A-4416-87A8-098C6272EB41Q49987139-BE59D385-48AC-4FD4-A946-4DD29A6BEC36Q60450595-B0DEAA6F-9A36-43BA-A4EA-E37244864CFDQ60488003-16A9C550-1A66-4FFD-8D29-FDC30CAAEC92Q90416434-73A5946F-6726-45BE-810C-AA48F95A13CEQ93365608-DF2FF971-4A22-4CBB-ABBF-DE1037A982B0
P50
description
hulumtuese
@sq
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Min Hyuk Park
@ast
Min Hyuk Park
@en
Min Hyuk Park
@es
Min Hyuk Park
@nl
Min Hyuk Park
@sl
type
label
Min Hyuk Park
@ast
Min Hyuk Park
@en
Min Hyuk Park
@es
Min Hyuk Park
@nl
Min Hyuk Park
@sl
prefLabel
Min Hyuk Park
@ast
Min Hyuk Park
@en
Min Hyuk Park
@es
Min Hyuk Park
@nl
Min Hyuk Park
@sl
P1053
A-3810-2014
P106
P1153
35722792100
P21
P2798
P31
P3829
P496
0000-0001-6333-2668
P569
2000-01-01T00:00:00Z