Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.
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Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.
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2018 nî lūn-bûn
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2018年の論文
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2018年学术文章
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2018年学术文章
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2018年学术文章
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2018年學術文章
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Anisotropic sensor and memory ...... as the only magnetic element.
@en
Anisotropic sensor and memory ...... as the only magnetic element.
@nl
type
label
Anisotropic sensor and memory ...... as the only magnetic element.
@en
Anisotropic sensor and memory ...... as the only magnetic element.
@nl
prefLabel
Anisotropic sensor and memory ...... as the only magnetic element.
@en
Anisotropic sensor and memory ...... as the only magnetic element.
@nl
P2093
P2860
P1433
P1476
Anisotropic sensor and memory ...... as the only magnetic element.
@en
P2093
B Martínez
C Frontera
H Aramberri
J Cisneros-Fernández
K Bouzehouane
L Balcells
L Lόpez-Mir
P2860
P356
10.1038/S41598-017-19129-5
P407
P577
2018-01-16T00:00:00Z