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Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMnInhomogeneous spatial distribution of the magnetic transition in an iron-rhodium thin film.Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition.Direct evidence of anomalous interfacial magnetization in metamagnetic Pd doped FeRh thin films.Control of antiferromagnetic domain distribution via polarization-dependent optical annealing.Nanopatterning reconfigurable magnetic landscapes via thermally assisted scanning probe lithography.Antiferromagnetic proximity effect in epitaxial CoO/NiO/MgO(001) systemsStable room-temperature ferromagnetic phase at the FeRh(100) surface.Giant Controllable Magnetization Changes Induced by Structural Phase Transitions in a Metamagnetic Artificial MultiferroicMultiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure.Spin-Hall-Effect-Assisted Electroresistance in Antiferromagnets via 10(5) A/cm(2) dc Current.Purely antiferromagnetic magnetoelectric random access memory.Field-free switching of perpendicular magnetization through spin-orbit torque in antiferromagnet/ferromagnet/oxide structures.Large anomalous Hall effect driven by a nonvanishing Berry curvature in the noncolinear antiferromagnet Mn3Ge.Colossal magnetic phase transition asymmetry in mesoscale FeRh stripes.Interface-Induced Phenomena in Magnetism.Tunneling anisotropic magnetoresistance driven by magnetic phase transition.Magnetoelectric Force Microscopy on Antiferromagnetic 180∘ Domains in Cr₂O₃.Substrate Induced Strain Field in FeRh Epilayers Grown on Single Crystal MgO (001) SubstratesEpitaxial Growth of Intermetallic MnPt Films on Oxides and Large Exchange Bias.Large resistivity modulation in mixed-phase metallic systems.Hidden Magnetic States Emergent Under Electric Field, In A Room Temperature Composite Magnetoelectric Multiferroic.Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance.Model of ultrafast demagnetization driven by spin-orbit coupling in a photoexcited antiferromagnetic insulator Cr2O3.Phase Coexistence and Kinetic Arrest in the Magnetostructural Transition of the Ordered Alloy FeRh.Quantitative TEM imaging of the magnetostructural and phase transitions in FeRh thin film systems.Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element.Magnetic Moment Orientation-Dependent Spin Dissipation in Antiferromagnets.Strong Coupling of Microwave Photons to Antiferromagnetic Fluctuations in an Organic Magnet.Antiferromagnetic Domain Wall Motion Driven by Spin-Orbit Torques.Compensated Ferrimagnetic Tetragonal Heusler Thin Films for Antiferromagnetic Spintronics.APPLIED PHYSICS. Addressing an antiferromagnetic memory.All-Electric Access to the Magnetic-Field-Invariant Magnetization of Antiferromagnets.Electric field mediated non-volatile tuning magnetism at the single-crystalline Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 interface.Different magnetic responses observed in Co, Co and Co-based MOFs.Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy.Ionic liquid gating control of RKKY interaction in FeCoB/Ru/FeCoB and (Pt/Co)2/Ru/(Co/Pt)2 multilayers.Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs.Strain-induced structural instability in FeRh
P2860
Q30313812-E570A94F-4110-410E-9FA8-F1B9703D835BQ33786487-97587D8B-43F0-4A09-8A3D-C15D4CB2EB61Q33905570-E0345D87-512B-4BEF-A731-E06A3B1E6FCDQ35179306-DC8592EF-5DC8-4EC9-9BE9-5C5E179B5767Q35934537-1802BB2E-8C89-448D-AE72-4D20AFA5E2C1Q35947755-D499DA95-4705-4B86-8DB5-8DF633F63CD7Q36638227-8984C145-B1B3-4549-BE1C-AD75B75F3701Q36645261-97530AE7-D32D-46F3-A9DF-3B9427E52B08Q36651223-DA1F104A-472B-40EA-B0D3-75787E3253E4Q37000082-4A1D3927-FD34-4B65-939C-AC328C117C56Q37096624-168F6034-A3F4-45B8-9813-35C03794B2C5Q37193384-74E19064-F9B6-4A49-9692-00285671F8ECQ37562531-B780D107-C2E5-4B1A-8F6E-8BCB79A56B2FQ38840751-5CD0E552-FA86-422E-BCD4-FCB66F2E669CQ39789465-54644767-E530-4B76-A923-8E01AA9BB04EQ41450519-B9412383-4E49-4DA6-B2F6-456FADA7BC5DQ41633849-1574E2C9-26F8-4547-BF79-F1D4F5C574A1Q41634959-E8E68EBA-46DF-403F-BFCB-D452232BAAF4Q41675810-D2430823-74EF-4EAD-80A5-10AD43D45C01Q42116502-D28BD189-076F-40A2-81EA-60912F0A7B2BQ44156120-B65C8125-62E8-4C66-9111-D87B49046B54Q46199204-6CEACB82-97C7-4198-ADEE-AAAF7D3CBABFQ46505715-11772FAE-5FD5-447E-B098-9ED9C448976AQ47556842-84ADA803-4BF9-47F7-9DB8-CBB243F4F32DQ47781064-97587EC0-121C-41EA-8D6F-D8479797C85AQ48043316-7459DC05-7BAE-412B-9470-AA1AEBF58C6BQ48091387-56C19F93-F8B9-468F-B1C4-AD31F371163BQ49180158-B9BDF0E7-1A4E-4196-89F7-2B45E6A34C16Q50066410-24CAB39E-77BA-4BA2-A7D6-3ABDC6509756Q50101933-572E58FD-262F-478C-AE1D-A0985E07E2FDQ50227183-C0D1E00A-AD77-4C94-B73E-B4F37D5FAE1CQ50631477-359377AE-3E6C-4A7B-BC2F-52697466CA0FQ50667199-06D6AA6A-416D-4D69-8E8F-A8C34D58E263Q50709096-3D358EDA-69F3-4271-AF7C-79271B755F3BQ50752438-D0653073-1E1F-4F85-9906-03BFFDCA6D06Q51268504-A70C1E7C-47C5-4101-BC69-7E9806893D7DQ51435564-BD112722-279D-4447-85C1-0DA13E90A01CQ52668543-52E25315-52CF-427D-873A-ABC3C2FA4D07Q52719052-5C5AD94F-6863-4D22-A518-67F8B60DBAF5Q56994112-47F611AD-9038-45BD-969E-C13C37F34809
P2860
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年学术文章
@wuu
2014年学术文章
@zh
2014年学术文章
@zh-cn
2014年学术文章
@zh-hans
2014年学术文章
@zh-my
2014年学术文章
@zh-sg
2014年學術文章
@yue
2014年學術文章
@zh-hant
name
Room-temperature antiferromagnetic memory resistor.
@en
Room-temperature antiferromagnetic memory resistor.
@nl
type
label
Room-temperature antiferromagnetic memory resistor.
@en
Room-temperature antiferromagnetic memory resistor.
@nl
prefLabel
Room-temperature antiferromagnetic memory resistor.
@en
Room-temperature antiferromagnetic memory resistor.
@nl
P2093
P50
P356
P1433
P1476
Room-temperature antiferromagnetic memory resistor.
@en
P2093
C T Nelson
J D Clarkson
J Kudrnovský
S Salahuddin
P2888
P304
P356
10.1038/NMAT3861
P407
P50
P577
2014-01-26T00:00:00Z
P5875
P698
P818
1503.05604