Formation and electronic properties of InSb nanocrosses.
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Indium Antimonide Nanowires: Synthesis and PropertiesMulti-terminal Josephson junctions as topological matter.Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions.Metal-seeded growth of III-V semiconductor nanowires: towards gold-free synthesis.Rationally designed single-crystalline nanowire networks.Observation of Conductance Quantization in InSb Nanowire Networks.Quantum Criticality in Resonant Andreev Conduction.Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes.Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.Tunable quantum confinement in ultrathin, optically active semiconductor nanowires via reverse-reaction growth.Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxyMilestones Toward Majorana-Based Quantum ComputingTime scales for Majorana manipulation using Coulomb blockade in gate-controlled superconducting nanowiresSingle fermion manipulation via superconducting phase differences in multiterminal Josephson junctions
P2860
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P2860
Formation and electronic properties of InSb nanocrosses.
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2013 nî lūn-bûn
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2013年の論文
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2013年学术文章
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2013年学术文章
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2013年学术文章
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2013年学术文章
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2013年學術文章
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name
Formation and electronic properties of InSb nanocrosses.
@en
Formation and electronic properties of InSb nanocrosses.
@nl
type
label
Formation and electronic properties of InSb nanocrosses.
@en
Formation and electronic properties of InSb nanocrosses.
@nl
prefLabel
Formation and electronic properties of InSb nanocrosses.
@en
Formation and electronic properties of InSb nanocrosses.
@nl
P2093
P2860
P50
P356
P1476
Formation and electronic properties of InSb nanocrosses.
@en
P2093
George W G Immink
Ilse van Weperen
Jakob Kammhuber
Leo P Kouwenhoven
Ludo J Cornelissen
Sergey M Frolov
P2860
P2888
P304
P356
10.1038/NNANO.2013.198
P407
P577
2013-10-13T00:00:00Z