Rationally designed single-crystalline nanowire networks.
about
Indium Antimonide Nanowires: Synthesis and PropertiesControlling nanowire growth through electric field-induced deformation of the catalyst droplet.Ballistic superconductivity in semiconductor nanowiresHard Superconducting Gap in InSb Nanowires.Observation of Conductance Quantization in InSb Nanowire Networks.Epitaxy of advanced nanowire quantum devices.Ballistic Majorana nanowire devices.Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy
P2860
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P2860
Rationally designed single-crystalline nanowire networks.
description
2014 nî lūn-bûn
@nan
2014年の論文
@ja
2014年論文
@yue
2014年論文
@zh-hant
2014年論文
@zh-hk
2014年論文
@zh-mo
2014年論文
@zh-tw
2014年论文
@wuu
2014年论文
@zh
2014年论文
@zh-cn
name
Rationally designed single-crystalline nanowire networks.
@en
Rationally designed single-crystalline nanowire networks.
@nl
type
label
Rationally designed single-crystalline nanowire networks.
@en
Rationally designed single-crystalline nanowire networks.
@nl
prefLabel
Rationally designed single-crystalline nanowire networks.
@en
Rationally designed single-crystalline nanowire networks.
@nl
P2860
P50
P356
P1433
P1476
Rationally designed single-crystalline nanowire networks.
@en
P2093
P2860
P304
P356
10.1002/ADMA.201400924
P407
P577
2014-04-22T00:00:00Z