Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack.
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Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack.
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2017 nî lūn-bûn
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Subthreshold swing improvement ...... O2/HfO2 gate dielectric stack.
@en
Subthreshold swing improvement ...... O2/HfO2 gate dielectric stack.
@nl
type
label
Subthreshold swing improvement ...... O2/HfO2 gate dielectric stack.
@en
Subthreshold swing improvement ...... O2/HfO2 gate dielectric stack.
@nl
prefLabel
Subthreshold swing improvement ...... O2/HfO2 gate dielectric stack.
@en
Subthreshold swing improvement ...... O2/HfO2 gate dielectric stack.
@nl
P2093
P2860
P356
P1433
P1476
Subthreshold swing improvement ...... O2/HfO2 gate dielectric stack.
@en
P2093
Ahmad Zubair
Amirhasan Nourbakhsh
Sameer Joglekar
Tomás Palacios
P2860
P304
P356
10.1039/C7NR00088J
P407
P577
2017-04-27T00:00:00Z