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Q50697162-4D5A8A49-528C-427F-85C4-565104A81B17
Q50697162-4D5A8A49-528C-427F-85C4-565104A81B17
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http://www.wikidata.org/entity/statement/Q50697162-4D5A8A49-528C-427F-85C4-565104A81B17
Subthreshold swing improvement in MoS2 transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO2/HfO2 gate dielectric stack.
P2860
Q50697162-4D5A8A49-528C-427F-85C4-565104A81B17
BestRank
Statement
http://www.wikidata.org/entity/statement/Q50697162-4D5A8A49-528C-427F-85C4-565104A81B17
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type
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af969ca65aeed329c8caf0edf472672f28e2cba5
P2860
Negative capacitance in a ferroelectric capacitor.