Design of an efficient charge-trapping layer with a built-in tunnel barrier for reliable organic-transistor memory.
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High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites.Flexible Nonvolatile Transistor Memory with Solution-Processed Transition Metal Dichalcogenides.High-Performance Flexible Organic Nano-Floating Gate Memory Devices Functionalized with Cobalt Ferrite Nanoparticles.A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.Flexible Organic Tribotronic Transistor Memory for a Visible and Wearable Touch Monitoring System.Reversible Optical and Electrical Switching of Air-Stable OFETs for Nonvolatile Multi-Level Memories and Logic Gates
P2860
Design of an efficient charge-trapping layer with a built-in tunnel barrier for reliable organic-transistor memory.
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2014 nî lūn-bûn
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name
Design of an efficient charge- ...... ble organic-transistor memory.
@en
Design of an efficient charge- ...... ble organic-transistor memory.
@nl
type
label
Design of an efficient charge- ...... ble organic-transistor memory.
@en
Design of an efficient charge- ...... ble organic-transistor memory.
@nl
prefLabel
Design of an efficient charge- ...... ble organic-transistor memory.
@en
Design of an efficient charge- ...... ble organic-transistor memory.
@nl
P2860
P356
P1433
P1476
Design of an efficient charge- ...... able organic-transistor memory
@en
P2093
Young-Su Park
P2860
P304
P356
10.1002/ADMA.201404625
P407
P50
P577
2014-12-05T00:00:00Z