Pressure and electric field-induced metallization in the phase-engineered ZrX2 (X = S, Se, Te) bilayers.
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Electronic structure engineering of various structural phases of phosphorene.Electronic properties of layered phosphorus heterostructures.Tuning the electronic properties of monolayer and bilayer transition metal dichalcogenide compounds under direct out-of-plane compression.Tuning Dirac points by strain in MoX2 nanoribbons (X = S, Se, Te) with a 1T' structure.
P2860
Pressure and electric field-induced metallization in the phase-engineered ZrX2 (X = S, Se, Te) bilayers.
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2015 nî lūn-bûn
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2015年の論文
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2015年学术文章
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2015年学术文章
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name
Pressure and electric field-in ...... ZrX2 (X = S, Se, Te) bilayers.
@en
Pressure and electric field-in ...... ZrX2 (X = S, Se, Te) bilayers.
@nl
type
label
Pressure and electric field-in ...... ZrX2 (X = S, Se, Te) bilayers.
@en
Pressure and electric field-in ...... ZrX2 (X = S, Se, Te) bilayers.
@nl
prefLabel
Pressure and electric field-in ...... ZrX2 (X = S, Se, Te) bilayers.
@en
Pressure and electric field-in ...... ZrX2 (X = S, Se, Te) bilayers.
@nl
P2093
P2860
P356
P1476
Pressure and electric field-in ...... ZrX2 (X = S, Se, Te) bilayers.
@en
P2093
Ashok Kumar
Haiying He
K Tankeshwar
P K Ahluwalia
Ravindra Pandey
P2860
P304
19215-19221
P356
10.1039/C5CP01445J
P407
P577
2015-07-01T00:00:00Z